AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids

AdvanSiC - 欧洲中压电网经济高效的高压 SiC 功率器件的进步

• 批准号: 10063342
• 金额: $ 51.03万
• 依托单位: UNIVERSITY OF NOTTINGHAM
• 依托单位国家: 英国
• 项目类别: EU-Funded
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=10063342
• 关键词: AdvanSiC; Advances; Cost; Effective; HV

For a larger deployment of clean and sustainable energies more efficient and competitive converter solutions are necessary. In this framework, wide Bandgap (WBG) technology provides benefits compared to conventional silicon technology. Even those benefits are well known, e.g. efficiency and/or sufficient reduction on converter footprint, right now SiC are far too expensive and its cost has a negative impact on overall system cost. In the view of this situation, the objective of AdvanSiC is to produce, test and validate costeffective HV SiC MOSFET semiconductors in various MVDC grid applications: a solid-state circuit breaker for DC converter stations, a full-scale wind converter and a full-scale solar inverter. The aim is to minimize HV SiC device cost by advanced design structures and process optimizations. And afterwards, assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level. The main goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.

为了更大规模地部署清洁和可持续能源，需要更高效和更具竞争力的转换器解决方案。在这个框架中，宽带隙（WBG）技术提供了与传统硅技术相比的益处。即使这些优点是众所周知的，例如效率和/或转换器占地面积的充分减少，现在SiC太昂贵，并且其成本对整个系统成本具有负面影响。鉴于这种情况，AdvanSiC的目标是在各种MVDC电网应用中生产、测试和验证具有成本效益的HV SiC MOSFET半导体：用于直流换流站的固态断路器、全尺寸风力换流器和全尺寸太阳能逆变器。其目的是通过先进的设计结构和工艺优化来降低HV SiC器件的成本。然后，确保一个免疫和可靠的环境来处理SiC快速瞬变，并优化无源器件和冷却系统，不仅在器件级，而且在系统级降低成本。AdvanSiC的主要目标是为欧洲的中小企业、初创企业和工业提供关键和新兴技术的行业领导地位，特别是在提供清洁和负担得起的能源的关键技术方面。