Next Generation Silicon-Carbide MOSFETs for Electrification and Renewable Energies

用于电气化和可再生能源的下一代碳化硅 MOSFET

• 批准号: 10072835
• 金额: $ 6.3万
• 依托单位: FARADAYVOLT LTD
• 依托单位国家: 英国
• 项目类别: Grant for R&D
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=10072835
• 关键词: Next; Generation; Silicon; Carbide; MOSFETs

FaradayVolt aims to tackle key challenges in the supply chain of core technologies essential for electrification and green energy transition.This will be done by re-defining the electromagnetic path of the SiC MOSFETs and implementing precise measurements in the thermal, mechanical and characterization design. This will lead to a more efficient product, with predictable performance as per design. This project will add to the strengths and aspirations of the UK supply chain of compound Power Semiconductors. The outcome of this project will be a high-growth and high-added-value product that can collectively contribute to the supply chain in the UK and strengthen its position as the market leader. In response to the present challenges related to net-zero, this project will progress the development of unique and highly innovative power MOSFETs, which outperform state-of-the-art IGBTs.

FaradayVolt旨在解决电气化和绿色能源转型所必需的核心技术供应链中的关键挑战。这将通过重新定义SiC mosfet的电磁路径并在热、机械和特性设计中实施精确测量来实现。这将导致更高效的产品，每个设计都具有可预测的性能。该项目将增加英国复合功率半导体供应链的优势和抱负。该项目的结果将是一个高增长和高附加值的产品，可以共同为英国的供应链做出贡献，并加强其作为市场领导者的地位。为了应对目前与净零相关的挑战，该项目将推进独特和高度创新的功率mosfet的开发，其性能优于最先进的igbt。