Encapsulated free-standing-like silicene: towards next generation two-dimensional silicon-based electronics

用电子束光刻技术研究了二硼化锆薄膜的图案化过程，结果表明，与其他常用的腐蚀剂如HF相比，磷酸(H3PO4)是一种合适的腐蚀剂。然而，在室温下的腐蚀被发现是缓慢的，并引起光致抗蚀剂边缘以下的过腐蚀。研究表明，该工艺可生产出质量较好的硅烯。它对基于电子束的光刻方法可以生产的硅片的尺寸和纵横比提供了宝贵的见解。还成功地研究了SOI膜在不造成污染的情况下从磁带到磁带的剥离和转移方法。

The patterning of zirconium diboride thin film by e-beam lithography was investigated by means of various techniques.These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However etchingat room temperature was found to be slow and to give rise to overetching below the edges of the photoresist. This investigation demonstrates that good quality silicene can be produced after this process. It gives preciousinsights into the dimensions and the aspect ratio of the silicene pieces that can be produced by this proposed electron beam-based lithography method.The investigations of methods for the exfoliation and the transfer of SOI membranes from tape to tape without causing contamination were also succesfully conducted.