Encapsulated free-standing-like silicene: towards next generation two-dimensional silicon-based electronics

采用多种技术对电子束光刻二硼化锆薄膜的图案化进行了研究。这些表征表明，与常用的蚀刻剂如HF相比，磷酸（H3PO4）是一种合适的蚀刻剂。然而，发现在室温下蚀刻是缓慢的，并且在光刻胶的边缘以下产生过度蚀刻。研究表明，该工艺可生产出高质量的硅烯。它提供了宝贵的见解的尺寸和长宽比的硅片，可以由这种提出的电子束为基础的光刻方法生产。研究了在不造成污染的情况下，SOI膜从胶带到胶带的剥离和转移方法。

The patterning of zirconium diboride thin film by e-beam lithography was investigated by means of various techniques.These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However etchingat room temperature was found to be slow and to give rise to overetching below the edges of the photoresist. This investigation demonstrates that good quality silicene can be produced after this process. It gives preciousinsights into the dimensions and the aspect ratio of the silicene pieces that can be produced by this proposed electron beam-based lithography method.The investigations of methods for the exfoliation and the transfer of SOI membranes from tape to tape without causing contamination were also succesfully conducted.