Encapsulated free-standing-like silicene: towards next generation two-dimensional silicon-based electronics

本文研究了电子束光刻二硼化锆薄膜的图形化，指出磷酸（H_3PO_4）是一种较好的刻蚀剂。然而，在室温下的蚀刻被发现是缓慢的，并引起光刻胶的边缘以下的蚀刻。研究结果表明，采用该工艺可以生产出高质量的硅烯。它给出了精确的洞察到的尺寸和纵横比的硅烯片，可以通过这种建议的电子束为基础的光刻方法，剥离和转移的SOI薄膜从磁带到磁带，而不会造成污染的方法的研究也成功地进行。

The patterning of zirconium diboride thin film by e-beam lithography was investigated by means of various techniques.These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However etchingat room temperature was found to be slow and to give rise to overetching below the edges of the photoresist. This investigation demonstrates that good quality silicene can be produced after this process. It gives preciousinsights into the dimensions and the aspect ratio of the silicene pieces that can be produced by this proposed electron beam-based lithography method.The investigations of methods for the exfoliation and the transfer of SOI membranes from tape to tape without causing contamination were also succesfully conducted.