Application Engineering of 3C-SiC Power Devices

3C-SiC功率器件应用工程

• 批准号: 102894
• 金额: $ 26.69万
• 依托单位: ANVIL SEMICONDUCTORS LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=102894
• 关键词: Application; Engineering; 3C; SiC; Power

The project’s goal is to make low-cost 3C-Silicon Carbide (SiC) power devices ready for real-world power applications. Power conversion is a major area of inefficiency in all power systems with silicon (Si) based systems reaching their limit. The use of compound semiconductors in power conversion is widely accepted as a route to a significant increase in efficiency and reduction in size/ weight. However, penetration of SiC devices has been limited by their high cost; currently an order higher than Si equivalents. Anvil has developed a unique technology that, by growing 3C-SiC on Si wafers, has the potential to enable the production of SiC components at a similar cost to Si ones, hence eliminating this barrier to their adoption. Anvil has early prototype devices but achieving the maximum efficiency in applications using wide bandgap semiconductors is not simple. It needs high-speed drivers, novel inverter designs, closed coupled layouts and high-temperature packages. This is best done as a system of device and inverter together rather than piece part design. The purpose of this project is to do exactly that; using models and simulations to optimise circuits and feedback optimal device design characteristics and demonstrate the potential user benefits of 3C-SiC power converters.

该项目的目标是使低成本的3C-碳化硅（SiC）功率器件为现实世界的功率应用做好准备。电力转换是所有电力系统中效率低下的主要领域，其中硅（Si）基系统达到其极限。在功率转换中使用化合物半导体被广泛接受为显著提高效率和减小尺寸/重量的途径。然而，SiC器件的渗透受到其高成本的限制;目前比Si等效物高一个数量级。Anvil开发了一种独特的技术，通过在Si晶片上生长3C-SiC，有可能以与Si相似的成本生产SiC组件，从而消除了采用SiC组件的障碍。Anvil有早期的原型设备，但在使用宽带隙半导体的应用中实现最大效率并不简单。它需要高速驱动器、新颖的逆变器设计、闭合耦合布局和高温封装。这是最好做的一个系统的设备和逆变器在一起，而不是件零件设计。该项目的目的正是要做到这一点;使用模型和仿真来优化电路和反馈最佳器件设计特性，并展示3C-SiC功率转换器的潜在用户利益。