TRASiCA:High current 3.3kV SiC Schottky diodes for hybrid modules in traction applications

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TRASiCA will demonstrate the gains in performance and system lifetime that can be brought about in the traction industry by integrating silicon carbide (SiC) power device technology into existing systems. A ‘hybrid SiC’ power module incorporating SiC power diodes with state-of-the-art Si trench IGBTs will be produced for Dynex Semiconductor’s customer Fertagus, and the performance benchmarked on the train network in Lisbon, Portugal, against the current silicon state-of-the-art. The SiC diodes used within this project represent a significant innovative step, given that devices of the required high current and high voltage (>50A, 3.3 kV) are not available on the market. Therefore, the diodes used within the module will be designed within Cambridge Microelctronics (Camutronics), and fabricated at Warwick University, so that they are specifically tailored for the application they serve. This will come after an exhaustive feasibility study that will compare the suitability of many SiC diode technologies for the target application.