TRASiCA:High current 3.3kV SiC Schottky diodes for hybrid modules in traction applications

TRASiCA：用于牵引应用混合模块的高电流 3.3kV SiC 肖特基二极管

• 批准号: 102897
• 金额: $ 44.18万
• 依托单位: DYNEX SEMICONDUCTOR LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=102897
• 关键词: TRASiCA; current; 3.3kV; SiC; Schottky

TRASiCA will demonstrate the gains in performance and system lifetime that can be brought about in the traction industry by integrating silicon carbide (SiC) power device technology into existing systems. A ‘hybrid SiC’ power module incorporating SiC power diodes with state-of-the-art Si trench IGBTs will be produced for Dynex Semiconductor’s customer Fertagus, and the performance benchmarked on the train network in Lisbon, Portugal, against the current silicon state-of-the-art. The SiC diodes used within this project represent a significant innovative step, given that devices of the required high current and high voltage (>50A, 3.3 kV) are not available on the market. Therefore, the diodes used within the module will be designed within Cambridge Microelctronics (Camutronics), and fabricated at Warwick University, so that they are specifically tailored for the application they serve. This will come after an exhaustive feasibility study that will compare the suitability of many SiC diode technologies for the target application.

TRASiCA将展示通过将碳化硅（SiC）动力器件技术集成到现有系统中，可以在牵引行业中带来性能和系统寿命方面的收益。将为Dynex半导体的客户Fertagus生产一种将SiC功率二极管与最先进的Si沟槽igbt结合在一起的“混合SiC”功率模块，并在葡萄牙里斯本的火车网络上对当前最先进的硅进行性能基准测试。考虑到市场上没有所需的高电流和高电压（bbb50a, 3.3 kV）器件，该项目中使用的SiC二极管代表了一个重要的创新步骤。因此，模块中使用的二极管将由剑桥微电子公司（Camutronics）设计，并在华威大学制造，以便它们专门为它们所服务的应用量身定制。这将在详尽的可行性研究之后，将比较许多SiC二极管技术对目标应用的适用性。