Feasibility assessment of a new low-cost Gallium Nitride (GaN) microinverter for domestic solar photovoltaic applications

用于家用太阳能光伏应用的新型低成本氮化镓 (GaN) 微型逆变器的可行性评估

• 批准号: 131699
• 金额: $ 3.15万
• 依托单位: ZAGRES LIMITED
• 依托单位国家: 英国
• 项目类别: Feasibility Studies
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=131699
• 关键词: Feasibility; assessment; new; low; cost

The project aims to study, assess and quantify the technical and commercial feasibility of a laboratory-proven Gallium Nitride (GaN) Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) technology for solar microinverters. The patented GaN device design enables 30% reduction in the fabrication cost of GaN MOSFET and 45% increase in device reliability. It can potentially reduce the Levelised Cost of Energy (LCOE) for domestic solar applications by 12% as compared to commercial Silicon (Si) based microinverters.

该项目旨在研究、评估和量化经过实验室验证的用于太阳能微型逆变器的氮化镓（GaN）金属氧化物半导体场效应晶体管（MOSFET）技术的技术和商业可行性。获得专利的 GaN 器件设计使 GaN MOSFET 的制造成本降低 30%，器件可靠性提高 45%。与商用硅 (Si) 微型逆变器相比，它可以将家用太阳能应用的平准化能源成本 (LCOE) 降低 12%。