Feasibility assessment of a new low-cost Gallium Nitride (GaN) microinverter for domestic solar photovoltaic applications

该项目旨在研究、评估和量化实验室验证的用于太阳能微型逆变器的氮化镓（GaN）金属氧化物半导体场效应晶体管（MOSFET）技术的技术和商业可行性。获得专利的GaN器件设计使GaN MOSFET的制造成本降低30%，器件可靠性提高45%。与商用硅（Si）微型逆变器相比，它可以将家用太阳能应用的均衡能源成本（LCOE）降低12%。

The project aims to study, assess and quantify the technical and commercial feasibility of a laboratory-proven Gallium Nitride (GaN) Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) technology for solar microinverters. The patented GaN device design enables 30% reduction in the fabrication cost of GaN MOSFET and 45% increase in device reliability. It can potentially reduce the Levelised Cost of Energy (LCOE) for domestic solar applications by 12% as compared to commercial Silicon (Si) based microinverters.