Study and assessment of technical and commercial feasibility of a new Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) technology for High Voltage DC (HVDC) electricity transmission for offshore renewables

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The project aims to study and assess the technical and commercial feasibility of a new Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) technology for large-scale power electronics inverters used in High Voltage DC (HVDC) electricity transmission for offshore renewables. The new technology offers substantial improvement in reliability and efficiency and reduction in manufacturing cost of SiC BJT power semiconductor devices, enabling more widespread application of HVDC grids; its exploitation can potentially reduce the Levelised Cost of Energy (LCOE) from offshore wind by 5.3% when compared to existing Silicon (Si) based HVDC inverters.