Development of a novel direct metallisation process for Cambridge Nanotherm's nanoceramic-Aluminium substrate in order to create a unique highly thermally efficient substrate material for the global electronics industry

为 Cambridge Nanotherm 的纳米陶瓷铝基板开发一种新颖的直接金属化工艺，以便为全球电子行业创造一种独特的高热效率基板材料

• 批准号: 710542
• 金额: $ 12.74万
• 依托单位: CAMBRIDGE NANOTHERM LIMITED
• 依托单位国家: 英国
• 项目类别: GRD Proof of Concept
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=710542
• 关键词: Development; novel; direct; metallisation; process

Almost 1/5th of global electricity is used for lighting, accounting for c.1.9bn tons of CO2 pa.High Brightness Light Emitting Diodes (HBLEDs) are globally recognised as a highlyefficient, long lasting & versatile light source, offering significant promise in the target ofimproved environmental & economic performance within the future energy demands forlighting.Whilst technological advancements have improved the efficiency of HBLED lightingsystems, currently only 25% of the power utilised is converted into visible light, with theremaining 75% generating heat that is dissipated through the substrate on which the LED ismounted. Without efficient thermal management, increased temperature within LED chipsleads to a drop in efficiency, reliability & LED lifespan & is recognized as the main cause offailure.Cambridge Nanotherm (CNL) has developed & patented a highly innovative nanoceramicaluminiumsubstrate to addresses the demand for efficient thermal management withinHBLEDs. Despite the significant breakthroughs that CNL’s substrate has made in thereduction of thermal resistance and LED working temperatures, there is scope for much largerefficiency gains. These gains are restricted, the cause of which lies in the use of epoxy resinadhesive layer used to connect the conductor layer to the nanoceramic substrate.This project seeks to explore the technical feasibility of a direct metallisation process to applythe conductor layer directly to their unique nanoceramic substrate in order to create a highlythermally efficient substrate material for the electronics industry. CNL believe the use ofdirect metallisation will allow them to offer a breakthrough 75% reduction in thermalresistance and increase operating temperatures to c.400°C, at a significantly lower cost thanthe current market offering.The project will prove this process at bench-scale & if successful, pre-production prototyping& scale up will ensue with expected market entry in 2016.

全球近五分之一的电力用于照明，相当于约19亿吨二氧化碳。高亮度发光二极管(HBLED)被全球公认为一种高效、持久和多功能的光源，在未来对照明的能源需求中提供了改善环境和经济性能的巨大希望。尽管技术进步提高了HBLED照明系统的效率，但目前只有25%的电能被转换为可见光，剩余75%的热量通过LED安装的衬底散失。如果没有有效的散热管理，LED芯片内温度的增加会导致效率、可靠性和LED寿命的下降，这被认为是导致LED失效的主要原因。剑桥纳米热体(CNL)开发了一种高度创新的纳米陶瓷铝基板，以满足HBLED对高效热管理的需求。尽管CNL的基板在降低热阻和LED工作温度方面取得了重大突破，但仍有更大的效率提升空间。这些收益受到限制，其原因在于使用了用于将导体层连接到纳米陶瓷基板的环氧树脂粘结层。该项目旨在探索直接金属化工艺的技术可行性，将导体层直接应用于其独特的纳米陶瓷基板，以创建用于电子工业的高热效率基板材料。CNL相信，直接金属化的使用将使他们的热阻降低75%，并将工作温度提高到约400°C，成本大大低于当前的市场供应。该项目将在实验室规模证明这一过程&如果成功，预计将于2016年进入市场，进行试生产样机和扩大规模。