Trench Clustered Insulated Gate Bipolar Transistor Manufacturing Process Capacity and Productivity Improvement
Trench Clustered Insulated Gate Bipolar Transistor Manufacturing Process Capacity and Productivity Improvement
批准号:
80731
负责人:
金额:
$43.12万
依托单位:
依托单位国家:
英国
项目类别:
Collaborative R&D
财政年份:
2020
资助国家:
英国
项目状态:
已结题
起止时间:
2020 至 --
中文摘要
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英文摘要
Semefab,the indigenous, open access semiconductor and MEMs sensor design and manufacturing company with three wafer fabrication facilities in Glenrothes, Scotland, intends to become a mainstream, indigenous manufacturer of power semiconductors.The IGBT component is mainstream in PEMD switching semiconductor device applications. Semefab's application is based around establishing patented, performance leading 1700V Trench clustered IGBT (TCIGBT) manufacturing capability at Semefab in Fab 3 on 6 inch wafers. This will create a high current density, high performance component applicable to mainstream industrial drive, solar, wind farm and electric vehicle applications and create a platform for higher and lower voltage applications.Semefab's strategic development objective for power electronics follows our belief that there is a clear and present need for establishing this manufacturing capability within UK to enhance critical infrastructure, increase UK industrial supply chain resilience and deliver tangible benefits to existing and future UK users of such devices.
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