Trench Clustered Insulated Gate Bipolar Transistor Manufacturing Process Capacity and Productivity Improvement

沟道簇状绝缘栅双极晶体管制造工艺能力和生产率的提高

• 批准号: 80731
• 金额: $ 43.12万
• 依托单位: SEMEFAB LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=80731
• 关键词: Trench; Clustered; Insulated; Gate; Bipolar

Semefab,the indigenous, open access semiconductor and MEMs sensor design and manufacturing company with three wafer fabrication facilities in Glenrothes, Scotland, intends to become a mainstream, indigenous manufacturer of power semiconductors.The IGBT component is mainstream in PEMD switching semiconductor device applications. Semefab's application is based around establishing patented, performance leading 1700V Trench clustered IGBT (TCIGBT) manufacturing capability at Semefab in Fab 3 on 6 inch wafers. This will create a high current density, high performance component applicable to mainstream industrial drive, solar, wind farm and electric vehicle applications and create a platform for higher and lower voltage applications.Semefab's strategic development objective for power electronics follows our belief that there is a clear and present need for establishing this manufacturing capability within UK to enhance critical infrastructure, increase UK industrial supply chain resilience and deliver tangible benefits to existing and future UK users of such devices.

Semefab是一家本土的开放存取半导体和MEMs传感器设计和制造公司，在苏格兰Glenrothes拥有三家晶圆制造工厂，打算成为主流的本土功率半导体制造商。IGBT器件是PEMD开关半导体器件应用的主流。Semefab的申请是基于在Semefab 3的6英寸晶圆上建立专利的，性能领先的1700V沟槽集群IGBT （TCIGBT）制造能力。这将创造一个适用于主流工业驱动、太阳能、风力发电场和电动汽车应用的高电流密度、高性能组件，并为更高和更低电压应用创造一个平台。Semefab的电力电子战略发展目标遵循我们的信念，即在英国建立这种制造能力，以增强关键基础设施，提高英国工业供应链的弹性，并为现有和未来的英国用户提供切实的利益。