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Trench Clustered Insulated Gate Bipolar Transistor Manufacturing Process Capacity and Productivity Improvement

Trench Clustered Insulated Gate Bipolar Transistor Manufacturing Process Capacity and Productivity Improvement
沟道簇状绝缘栅双极晶体管制造工艺能力和生产率的提高
批准号:
80731
负责人:
金额:
$43.12万
依托单位:
依托单位国家:
英国
项目类别:
Collaborative R&D
财政年份:
2020
资助国家:
英国
项目状态:
已结题
起止时间:
2020 至 --

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中文摘要
翻译
Semefab是一家本土的开放存取半导体和MEMS传感器设计和制造公司,在苏格兰格伦罗斯拥有三家晶圆制造工厂,旨在成为功率半导体的主流本土制造商。IGBT组件是PEMD开关半导体器件应用的主流。Semefab的应用基于Semefab在Fab 3 6英寸晶圆上建立获得专利、性能领先的1700V沟槽式集群IGBT(TCIGBT)制造能力。这将创造一个高电流密度、高性能的组件,适用于主流的工业驱动、太阳能、风电场和电动汽车应用,并为更高和更低电压的应用创造一个平台。Semefab的电力电子战略发展目标遵循我们的信念,即在英国建立这种制造能力以增强关键基础设施,提高英国工业供应链的弹性,并为此类设备的现有和未来英国用户带来切实利益。
英文摘要
Semefab,the indigenous, open access semiconductor and MEMs sensor design and manufacturing company with three wafer fabrication facilities in Glenrothes, Scotland, intends to become a mainstream, indigenous manufacturer of power semiconductors.The IGBT component is mainstream in PEMD switching semiconductor device applications. Semefab's application is based around establishing patented, performance leading 1700V Trench clustered IGBT (TCIGBT) manufacturing capability at Semefab in Fab 3 on 6 inch wafers. This will create a high current density, high performance component applicable to mainstream industrial drive, solar, wind farm and electric vehicle applications and create a platform for higher and lower voltage applications.Semefab's strategic development objective for power electronics follows our belief that there is a clear and present need for establishing this manufacturing capability within UK to enhance critical infrastructure, increase UK industrial supply chain resilience and deliver tangible benefits to existing and future UK users of such devices.
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