Polarisation Dynamics of Quantum Dot VCSELs: Proposal to support Visiting Researcher Dr. D. Alexandropoulos

量子点 VCSEL 的偏振动力学：支持访问研究员 D. Alexandropoulos 博士的提案

• 批准号: EP/H00873X/1
• 负责人: Ian Henning
• 金额: $ 8.71万
• 依托单位: University of Essex
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2009
• 资助国家: 英国
• 起止时间: 2009 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH00873X%2F1
• 关键词: Polarisation; Dynamics; Quantum; Dot; VCSELs

In recent years polarisation dynamics in vertical cavity surface-emitting lasers (VCSELs) has been the subject of considerable research effort. A wide range of phenomena including polarisation switching, bistability, limit cycles and chaos has been studied theoretically and experimentally in VCSELs subject to orthogonal optical injection. The active regions of these VCSELs have consisted of bulk or quantum well (QW) material. At the same time, there have been significant advances in the technology of quantum dot (QD) VCSELs, whose key advantages include an excitonic gain mechanism, suppressed carrier diffusion and low degradation rate. Recent research has concentrated on development of QD gain media to give ultrahigh modal gain and enhanced modulation response. Novel VCSEL cavity designs have also been developed to suppress parasitic modes which can cause gain depletion and self-pulsation. However, there are as yet very few reports of polarisation-dependent effects for these QD VCSELs. The theoretical study of polarised optical injection in QD VCSELs that is proposed here represents an entirely new research direction of fundamental importance that is certain to further enhance the UK's optoelectronics research profile.

近年来，垂直腔面发射激光器（VCSEL）中的偏振动力学一直是相当大的研究工作的主题。理论和实验研究了正交光注入VCSEL中的偏振开关、双稳、极限环和混沌等现象。这些VCSEL的有源区由体或量子阱（QW）材料组成。与此同时，量子点（QD）VCSEL技术也取得了重大进展，其主要优点包括激子增益机制，抑制载流子扩散和低退化率。最近的研究集中在QD增益介质的开发上，以提供多模增益和增强的调制响应。还开发了新颖的VCSEL腔设计以抑制可能导致增益耗尽和自脉动的寄生模式。然而，目前关于量子点垂直腔面发射激光器的偏振相关效应的报道还很少。这里提出的量子点VCSEL中偏振光注入的理论研究代表了一个全新的具有根本重要性的研究方向，肯定会进一步提高英国的光电子学研究概况。

项目成果

Instabilities in quantum-dot spin-VCSELs.

量子点自旋 VCSEL 的不稳定性。

• DOI: 10.1364/ol.37.001700
• 发表时间: 2012
• 期刊: Optics letters
• 影响因子: 3.6
• 作者: Alexandropoulos D

Semiconductor Modeling Techniques

半导体建模技术

• DOI: 10.1007/978-3-642-27512-8_8
• 发表时间: 2012
• 作者: Alexandropoulos D