Exploiting extrinsic passivation on thin film dielectrics for high efficiency silicon solar cells

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The aim of this project is to develop methods of extrinsic surface passivation to produce high-performing crystalline silicon solar cells. The efficiency of solar cells is largely limited by the recombination of electrons and holes at surfaces and interfaces, where there is a high concentration of material defects. Future generations of industrial solar cells will require cost effective techniques for producing semiconductor-dielectric interfaces with very low rates of recombination. Therefore, this project will focus on advancing both chemical and field effect passivation techniques to decrease charge recombination losses at surface and interface sites. Such techniques will consist of dielectric, hydrogen and ionic passivation methods, with an emphasis on long-term durability and industrial compatibility. Improved silicon surfaces will be achieved through the chemical removal of defect sites and the stabilisation of extrinsic ionic charges. As a means of achieving the objective, a study of the optimal deposition and processing techniques will be carried out.EPSRC theme: Energy