Silicon Detectors for Synchrotron X-Ray Fluorescence

描述（由申请人提供）： 我们将开发一种新的高效率硅X射线探测器，具有良好的能量分辨率和高计数率的能力，用于同步辐射X射线荧光（XRF）的应用。我们建议扩展非常成功的硅漂移探测器的设计，目前薄0.3毫米厚的基板上制作，到厚探测器（厚达1.5毫米）的领域。这种增加的厚度对于将探测器的X射线吸收能力扩展到40 keV至关重要。当前0.3 mm厚的硅在10 keV以上的效率迅速下降福尔斯（在30 keV下下降到9%），而1.5 mm在30 keV下效率为42%。同步加速器XRF技术正在成为生物医学应用领域的重要工具。几个同步加速器-如斯坦福大学同步辐射实验室和国家同步加速器光源-具有专用于XRF分析的硬X射线光束线。第三代同步加速器，例如高级光子源（APS），具有6-40 keV区域的光子通量亮度，可以使用微米及以下的探针进行高效的X射线荧光分析。所有这些光束线都需要高计数率、良好能量分辨率的能量色散X射线探测器，其具有高达40 keV的有效吸收。与传统的硅和锗XRF探测器相比，新的更厚的漂移探测器将具有非低温冷却、良好的能量分辨率和数量级的计数率提高的优点，同时提供10 keV以上的效率显著提高。 第一阶段的工作将包括厚硅漂移探测器的设计和制造，以及探测器在噪声、能量分辨率、效率和计数率能力方面的特性，以响应5-60 keV范围内的X射线。第二阶段的工作将包括开发一个厚漂移探测器阵列，以及相关的低噪声读出电子设备，用于建造一个XRF光谱仪，该光谱仪将在阿贡国家实验室的APS的同步加速器XRF实验中进行评估。

DESCRIPTION (provided by applicant): We will develop a new high efficiency silicon x-ray detector, with good energy resolution and high count rate capability for synchrotron x-ray fluorescence (XRF) applications. We propose to extend the very successful silicon drift detector design, currently fabricated on thin 0.3 mm thick substrates, into the realm of thick detectors (up to 1.5 mm thick). This added thickness is critical in extending the x-ray absorption capability of the detectors up to 40 keV. The current 0.3 mm thick silicon rapidly falls off in efficiency above 10 keV (down to 9% at 30 keV), whereas 1.5 mm is 42 % efficient at 30 keV. Synchrotron XRF techniques are becoming essential tools in the field of bio-medical applications. Several synchrotrons - such as the Stanford Synchrotron Radiation Laboratory and the National Synchrotron Light Source - have hard x-ray beam lines that are dedicated to XRF analysis. Third generation synchrotrons, such as the Advanced Photon Source (APS), have photon flux brilliances in the 6-40 keV region that allow efficient x-ray fluorescence analysis with probe sizes of a micrometer and below. All of these beamlines require high count rate, good energy resolution energy dispersive x-ray detectors that have efficient absorption up to 40 keV. The new, thicker drift detectors will have the advantages of non-cryogenic cooling, good energy resolution, and an order of magnitude improvement in count rates compared with conventional silicon and germanium XRF detectors, while providing a significant increase in efficiency above 10 keV. The Phase I work will include the design and fabrication of the thick silicon drift detectors, and the characterization of the detectors with respect to noise, energy resolution, efficiency and count rate capability in response to x-rays in the 5-60 keV range. The Phase II work will include development of a thick drift detector array, and the associated low noise readout electronics, for the construction of an XRF spectrometer that will be evaluated in a synchrotron XRF experiment at the APS at Argonne National Laboratory.