Nanoscale device engineering and plasmon-enhanced light-matter interactions for optically accessible resistive switches

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The project intends to reveal the exact switching mechanism in the RRAMs of various architectures. Using the process recently achieved by the Di Martino Lab [8], we develop innovative fast ways to study real-time movement of individual atoms in the filament formation process. Understanding the nanoscale kinetics of the switching mechanisms should reveal means for the controlled and effective device optimization. An ultimate goal of the project is to develop a RRAM device with high endurance and low programming energy. This would allow for the practical applications of memristive computing, opening up new routes to sustainable future IT. The project involves a combination of physical experiments, equipment modification, optical and electrical characterization, numerical simulation, and analytical description. Memristive devices are tested optically while being slowly switched from OFF to the ON state (and back). The optical response provides data for the modelling of the exact atom movement.So far, the nanoscale kinetics of RRAMs has been explicitly modelled based on the dark field spectroscopy data [8]. In this project we would like to extend the methodology to Raman spectroscopy. So far, we are involved in testing of the RRAMs based on NiO, hBN, and HfO2 which are provided by the Department of Engineering and Material Science of the Cambridge University. In the future, we plan to be pursue various new materials with the potential to become effective memristive switches.