Atomistic simulations of Magnetoresistive Random Access Memory

MRAM是在计算机存储器架构的所有级别（从寄存器和高速缓存到大容量存储）实现通用非易失性存储器技术的有前景的技术。该项目将通过结合最先进的自旋动力学和分子动力学建模，确定MRAM器件的最终可扩展性，可扩展到几纳米的极限。我们将研究热磁效应的作用，磁开关动力学和器件性能和速度的结构缺陷的作用。这可能会导致快速性能，高热稳定性和最终的可扩展性和密度的最佳器件设计。

MRAM is a promising technology to implement a universal non-volatile memory technology at all levels of a computer memory architecture, from registers and caches to bulk storage. This project will determine the ultimate scalability of MRAM devices down to the few nm limit by combining state-of-the-art spin dynamics and molecular dynamics modelling. We will investigate the role of thermal magnetic effects, magnetic switching dynamics and the role of structural defects on device performance and speed. This may lead to optimal device designs for fast performance, high thermal stability and ultimate scalability and density.