In-situ Investigation of Memristive Effects in Integrated Devices based on 2D Nanomaterials

基于二维纳米材料的集成器件中忆阻效应的原位研究

• 批准号: 2275022
• 金额: --
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2275022
• 关键词: situ; Investigation; Memristive; Effects; Integrated

The project involves the study of memristive behaviour in 2D nanomaterials, such as transition metal dichalcogenides and their heterostructures. Our goal is the development of new technologies based on these materials, followed by their integration into resistive switching memory (RRAM) devices. We also aim to explore novel multi-terminal device architectures and fabrication techniques.This research will employ state-of-the-art growth reactors and characterisation techniques, such as environmental electron microscopy, in-situ X-ray photoelectron spectroscopy and optical spectroscopy.Our project aligns with the EPSRC research interest into microelectronic device technology, as well as the optoelectronic devices and circuits research area.

该项目涉及2D纳米材料的忆阻行为研究，如过渡金属二硫属化物及其异质结构。我们的目标是开发基于这些材料的新技术，然后将其集成到阻变存储器（RRAM）器件中。本研究将采用最先进的生长反应器和表征技术，如环境电子显微镜、原位X射线光电子能谱和光学能谱等。我们的项目符合EPSRC对微电子器件技术的研究兴趣，以及光电器件和电路的研究领域。