Characterisation and manipulation of strain in halide perovskite semiconductors

卤化物钙钛矿是一种很有前途的半导体材料，特别是在光电器件中。应变可以存在于这些材料在多个不同长度尺度的薄膜中，并且与器件中的非辐射损耗有关。使用同步加速器x射线技术（如ptychography和BCXDI），以及更传统的x射线测量，我们的目标是可视化应变梯度的化学和结构特性。这与时间分辨发光层析成像测量相结合，用于绘制电荷载流子扩散和离子运动，将有助于我们理解应变在这些器件中所起的作用。一旦实现了这一点，也可以通过器件处理来操纵应变梯度。

Halide perovskites are a promising material class for semiconductor applications, especially in optoelectronic devices. Strain can be present in films of these materials on multiple different length scales and has been associated with non-radiative losses in devices. Using synchrotron X-ray techniques (such as ptychography and BCXDI), as well as more conventional X-ray measurements, we aim to visualise the chemical and structural properties of strain gradients. This, in combination with time-resolved luminescence tomography measurements for mapping charge carrier diffusion and ionic motion, will help us to understand the role strain plays in these devices. Once this is achieved, it may also be possible to manipulate the strain gradients through device processing.