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Quantitative Photoluminescence Imaging of Compound Semiconductors

Quantitative Photoluminescence Imaging of Compound Semiconductors
化合物半导体的定量光致发光成像
批准号:
2282139
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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中文摘要
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英文摘要
The performance, reliability, and yield of compound semiconductor devices such as solar cells, lasers, sensors and quantum devices is critically dependent on the quality of the material. Quantitative and reliable measurements for quality control of semiconductor wafers at a production line can increase productivity and reduce waste. Key indicators of the quality of a semiconductor material are the band gap and charge carrier lifetime, which can both be probed using photoluminescence spectroscopy. This project will work towards the development of a system that will enable fast spatial and spectral characterisation of semiconductor materials for in-line metrology through spectrally resolved, and time-resolved photoluminescence mapping using a compressed sensing technique. The demonstration of this prototype will introduce a new generation of in-line contactless tools for quantitative material characterisation.
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