Quantum memories with 125Te+ donors implanted in silicon

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Superconducting qubits, which are essentially collective excitations in superconductive circuits, are one of the leading platforms for the realisation of quantum computing, which would bring revolutionary changes to multiple fields such as chemistry, materials science and security. Currently, it is estimated that a million superconducting qubits will be needed for performing sufficiently error-corrected operations, but the implementation of a quantum memory in the circuit would reduce that number to the order of tens of thousands of qubits, which is much more technically feasible. Existing quantum memories either do not operate in the frequency range of superconducting qubits or their ability to store information is too short-lived and prone to error. By implanting ions of tellurium in a silicon substrate, an electron spin ensemble is created which collectively stores quantum states with long coherence times. Tellurium ions in particular are expected to allow transfer of information with sufficient fidelity via a superconducting resonator fabricated on the silicon sample, which drives a microwave magnetic field. Optimising the way the resonator communicates with the spin ensemble will be key to developing a quantum memory. Quantum memories with 125Te+ donors implanted in silicon also have the advantage of potentially operating at zero magnetic field, which will be crucial for future implementations of quantum memories next to superconducting qubits.