Non-conventional silicon nitride photonic devices for applications in quantum information

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The silicon (Si) platform has supported rapid growth in the development of optical quantum information processing (QIP) on integrated circuits [1] and while it possess many desirable properties such as high optical confinement and transparency at telecom wavelengths, it suffers from unacceptable levels of loss. Silicon nitride (SiN) has been shown to host many of the desirable optical properties that Si offers but it's large bandgap effectively negates any two photon absorption (TPA) at telecom wavelengths resulting in comparatively lower levels of loss [2]. The large Pockels coefficient of barium titanate (BTO) has been shown in [3] to offer high-speed, low power optical modulation in ring resonators when fabricated in conjunction with SiN and if significant non-linear interactions are present in BTO, this could pave the way for high quality, low foot print on-chip sources. If a SiN platform is to be perused, an understanding of its composition could allow further optimisation of its optical properties. Si3N4 is the most stable form but silicon-enriched SiNx has been shown to have enhanced non-linear properties [4]. A comprehensive study into different compositions and the underlying mechanisms behind any non-linear enhancements would aid the development as SiN as a platform for optical QIP.