Non-conventional silicon nitride photonic devices for applications in quantum information

硅（Si）平台支持集成电路上的光量子信息处理（QIP）发展的快速增长[1]，虽然它具有许多理想的特性，例如在电信波长处的高光学限制和透明性，但它遭受不可接受的损耗水平。氮化硅（SiN）已被证明具有Si提供的许多理想的光学特性，但它的大带隙有效地抵消了电信波长处的任何双光子吸收（TPA），从而导致相对较低的损耗水平[2]。钛酸钡（BTO）的大普克尔斯系数已经在[3]中示出，当与SiN结合制造时，在环形谐振器中提供高速、低功率的光学调制，并且如果在BTO中存在显著的非线性相互作用，则这可以为高质量、低占用面积的片上源铺平道路。如果要仔细阅读SiN平台，了解其组成可以进一步优化其光学特性。Si3N4是最稳定的形式，但富硅SiNx已被证明具有增强的非线性特性[4]。对不同成分和任何非线性增强背后的潜在机制的全面研究将有助于SiN作为光学QIP平台的发展。

The silicon (Si) platform has supported rapid growth in the development of optical quantum information processing (QIP) on integrated circuits [1] and while it possess many desirable properties such as high optical confinement and transparency at telecom wavelengths, it suffers from unacceptable levels of loss. Silicon nitride (SiN) has been shown to host many of the desirable optical properties that Si offers but it's large bandgap effectively negates any two photon absorption (TPA) at telecom wavelengths resulting in comparatively lower levels of loss [2]. The large Pockels coefficient of barium titanate (BTO) has been shown in [3] to offer high-speed, low power optical modulation in ring resonators when fabricated in conjunction with SiN and if significant non-linear interactions are present in BTO, this could pave the way for high quality, low foot print on-chip sources. If a SiN platform is to be perused, an understanding of its composition could allow further optimisation of its optical properties. Si3N4 is the most stable form but silicon-enriched SiNx has been shown to have enhanced non-linear properties [4]. A comprehensive study into different compositions and the underlying mechanisms behind any non-linear enhancements would aid the development as SiN as a platform for optical QIP.