MBE-grown 1550-nm III-V quantum-dot materials and devices on Si substrate for Si photonic systems

用于硅光子系统的硅衬底上 MBE 生长的 1550 nm III-V 量子点材料和器件

• 批准号: 2433417
• 金额: --
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2433417
• 关键词: MBE; grown; 1550; nm; III

Recently high performance electrically pumped 1300-nm quantum-dot lasers have been successfully demonstrated on Si substrate between Cardiff and UCL. Pushing the lasing wavelength of III-V/Si quantum-dot laser to most desirable telecom wavelength of 1550 nm will be next challenge for epitaxial growth. 1550-nm quantum-dot laser will be exploited in this project based on our techniques on Si-based and Ge-based 1300-nm InAs/GaAs quantum-dot lasers, GaAs-based GaAsSb metamorphic 1550-nm quantum dots [Appl. Phys. Lett. 92, 111906 (2008)] and conventional InP-based 1550-nm quantum dots. Once practical 1550-nm III-V/Si quantum-dot device having been demonstrated, the integration of photonic component with Si waveguides will be studied for Si Photonic System, hence further integration with Silicon microelectronics. The methodology will focus on exploiting novel growth techniques by using new epitaxial facility, Molecular Beam Epitaxy on InGaAsP/InP, InAlGaAs/InP, and GaAsSb/GaAs quantum-dot system at UCL EEE department, device-processing facilities at LCN, and study the optical and structural properties by ATM and STM at UCL.

最近在卡迪夫和UCL之间的硅衬底上成功地实现了高性能的电泵浦1300 nm量子点激光器。将III-V/Si量子点激光器的激射波长推到最理想的电信波长1550 nm将是外延生长的下一个挑战。1550-nm量子点激光器将在本项目中基于我们在Si基和Ge基1300-nm InAs/GaAs量子点激光器、GaAs基GaAsSb变质1550-nm量子点[Appl.Phys.Lett. 92，111906（2008）]和常规的基于InP的1550-nm量子点。一旦实用的1550 nm III-V/Si量子点器件被证实，将研究光子器件与Si波导的集成，从而进一步与硅微电子学集成。该方法将侧重于通过使用新的外延设备、UCL EEE部门的InGaAsP/InP、InAlGaAs/InP和GaAsSb/GaAs量子点系统上的分子束外延、LCN的器件加工设施来开发新型生长技术，并通过UCL的ATM和STM研究光学和结构特性。