Strain Engineering of Interfaces in 2D Lateral Heterostructures

二维横向异质结构界面的应变工程

• 批准号: 2486498
• 金额: --
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2486498
• 关键词: Strain; Engineering; Interfaces; 2D; Lateral

Lateral 2D heterostructures are formed when multiple 2D materials are interfaced leading to continuous 2D structures. The heterogeneous nature of these interfaces gives them unique crystallographic, electrical and optical properties. Strain due to lattice mismatching has been shown to lead to a unique electronic structure at their interface. This work aims to characterise the interfaces formed between these materials and to understand how these interfaces influence electron transport across them. Further work will then be performed to apply the knowledge of these interactions to improve existing devices and potentially create new ones.

当多个2D材料接合时形成横向2D异质结构，从而导致连续的2D结构。这些界面的异质性赋予了它们独特的晶体学、电学和光学特性。由于晶格失配引起的应变已被证明会在它们的界面处导致独特的电子结构。这项工作的目的是研究这些材料之间形成的界面，并了解这些界面如何影响电子在其中的传输。然后将进行进一步的工作，以应用这些相互作用的知识来改进现有设备并可能创建新设备。

项目成果

Nanoscale Characterisation of Heterointerfaces in 2D Materials

二维材料异质界面的纳米级表征

• DOI: 10.17863/cam.105989
• 发表时间: 2023
• 作者: Ramsden H