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Nanowire photonic crystal surface-emitting lasers (PCSELs)

纳米线光子晶体表面发射激光器 (PCSEL)

基本信息

批准号：
2620545
负责人：
金额：
--
依托单位：
CARDIFF UNIVERSITY
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2021
资助国家：
英国
起止时间：
2021 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2620545
关键词：
Nanowire photonic crystal surface emitting

项目摘要

Recent developments in photonic crystal surface-emitting lasers (PCSELs) have shown superior performance to commonly used vertical cavity surface emitting lasers (VCSELs) and edge emitting lasers. The high-brightness, symmetric beam with extremely narrow beam divergence make them highly promising for light detection and ranging (Lidar) and optical sensing applications. Typically, top-down etching to form photonic crystal lattices and epitaxial overgrowth processes are combined to fabricate PCSELs. In this project, we will make use of the InGaAs nanowire platform developed by the metal organic chemical vapour deposition (MOCVD) at Cardiff University for PCSEL applications. These nanowires are grown on lithographically defined, patterned SOI substrates using catalyst-free selective hetero-epitaxy. The nanoscale interface between silicon and III-V nanowires facilitates elastic relaxation in lateral directions, overcoming one of the most formidable challenges in materials integration. The ability to arrange nanowires into photonic crystal structures and to engineer the nanowire array parameters (e.g. lattice constant, nanowire diameter, height) to match optical modes creates exciting opportunities for emerging technologies such as band-edge lasers and topological lasers. The funded student is expected to be focusing on design, epitaxy and characterisations of nanowire photonic crystal structures, with support from postdoc researchers and collaborators on modelling and fabrication.

光子晶体表面发射激光器 (PCSEL) 的最新发展显示出比常用的垂直腔表面发射激光器 (VCSEL) 和边缘发射激光器更优越的性能。高亮度、对称光束和极窄的光束发散角使其在光探测和测距（激光雷达）以及光学传感应用中极具前景。通常，将自上而下的蚀刻形成光子晶格和外延过度生长工艺相结合来制造 PCSEL。在这个项目中，我们将利用卡迪夫大学金属有机化学气相沉积（MOCVD）开发的InGaAs纳米线平台进行PCSEL应用。这些纳米线采用无催化剂选择性异质外延生长在光刻限定的图案化 SOI 基板上。硅和 III-V 纳米线之间的纳米级界面有利于横向弹性弛豫，克服了材料集成中最艰巨的挑战之一。将纳米线排列成光子晶体结构并设计纳米线阵列参数（例如晶格常数、纳米线直径、高度）以匹配光学模式的能力为带边激光器和拓扑激光器等新兴技术创造了令人兴奋的机会。受资助的学生预计将在博士后研究人员和建模和制造合作者的支持下，专注于纳米线光子晶体结构的设计、外延和表征。