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High Frequency Power Conversion Using Wide Band-Gap Semiconductors

High Frequency Power Conversion Using Wide Band-Gap Semiconductors
使用宽带隙半导体的高频功率转换
批准号:
2639282
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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中文摘要
翻译
宽带隙(WBG)半导体为电力电子系统的设计者提供了许多潜在的好处。更低的开关损耗允许在更高的开关频率下工作,这原则上允许在许多转换器应用中减少无源元件值。然而,在更高的开关频率下,高效的工作需要更高的电压和电流转换速率。在传统的封装和电路结构中,寄生电感和电容会降低变换器的性能,降低效率并增加系统发出的电磁干扰(EMI)。在换相电池之外,快速电压转换可能导致不可接受的高水平传导和辐射EMI。为了减轻传统模块中的这些影响,通常故意限制开关速度,并且无法充分实现使用WBG技术的潜在优势。因此,需要新的方法,从分立组件组件(每个组件都是单独设计和封装的)转变为完全集成的组件,包括功率器件、栅极驱动器、滤波器、传感和控制功能。该研究项目将研究用于100 W至100 kW系统功率水平的封装转换器(CiP)模块的设计和实现,将单个换向单元与紧密耦合栅极驱动器、输入/输出滤波和降低EMI结合起来。有可能进行详细调查的领域包括:高频变频器拓扑结构与控制设计无源元件的设计与实现高频紧凑型变频器的装配与制造方法。电路布局和EMI缓解策略
英文摘要
Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in many converter applications. However, efficient operation at higher switching frequencies requires increased voltage and current transition rates. With conventional packaging and circuit construction, parasitic inductance and capacitance can deteriorate converter performance, reducing efficiency and adding to the electromagnetic interference (EMI) emitted from the system. Outside the commutation cell, fast voltage transitions may lead to unacceptably high levels of conducted and radiated EMI. To mitigate these effects in conventional modules, switching speeds are often deliberately limited and the potential benefits of using WBG technologies cannot be fully realized. New approaches are thus required, moving from assemblies of discrete components, each of which is designed and packaged separately, to fully integrated assemblies comprising power devices, gate drives, filters, sensing, and control functions. The research project will examine the design and realization of Converter-in-Package (CiP) modular blocks for system power levels from 100s W to 100s kW, incorporating individual commutation cells with close-coupled gate drives, input/output filtering and reduced EMI. Potential areas with scope for detailed investigation include: 1. Converter topology and control design for high frequency operation2. Passive component design and realization3. Assembly and manufacturing methods for high frequency compact converters4. Circuit layout and EMI mitigation strategies
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