High Frequency Power Conversion Using Wide Band-Gap Semiconductors

使用宽带隙半导体的高频功率转换

• 批准号: 2639282
• 金额: --
• 依托单位: University of Nottingham
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2639282
• 关键词: Frequency; Power; Conversion; Using; Wide

Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in many converter applications. However, efficient operation at higher switching frequencies requires increased voltage and current transition rates. With conventional packaging and circuit construction, parasitic inductance and capacitance can deteriorate converter performance, reducing efficiency and adding to the electromagnetic interference (EMI) emitted from the system. Outside the commutation cell, fast voltage transitions may lead to unacceptably high levels of conducted and radiated EMI. To mitigate these effects in conventional modules, switching speeds are often deliberately limited and the potential benefits of using WBG technologies cannot be fully realized. New approaches are thus required, moving from assemblies of discrete components, each of which is designed and packaged separately, to fully integrated assemblies comprising power devices, gate drives, filters, sensing, and control functions. The research project will examine the design and realization of Converter-in-Package (CiP) modular blocks for system power levels from 100s W to 100s kW, incorporating individual commutation cells with close-coupled gate drives, input/output filtering and reduced EMI. Potential areas with scope for detailed investigation include: 1. Converter topology and control design for high frequency operation2. Passive component design and realization3. Assembly and manufacturing methods for high frequency compact converters4. Circuit layout and EMI mitigation strategies

宽带隙（WBG）半导体为电力电子系统的设计者提供了许多潜在的好处。较低的开关损耗允许在较高的开关频率下工作，这原则上允许在许多转换器应用中减少无源元件值。然而，在较高开关频率下的有效操作需要增加的电压和电流转变速率。在传统封装和电路结构中，寄生电感和电容会降低转换器性能，降低效率并增加系统发出的电磁干扰（EMI）。在换向单元外部，快速电压转换可能导致不可接受的高水平传导和辐射EMI。为了减轻传统模块中的这些影响，开关速度通常被故意限制，并且使用WBG技术的潜在好处无法完全实现。因此，需要新的方法，从分立元件的组件，其中每一个是单独设计和封装，以完全集成的组件，包括功率器件，栅极驱动器，滤波器，传感和控制功能。该研究项目将研究用于100 s W至100 s kW系统功率级的转换器级封装（CiP）模块化模块的设计和实现，将单个整流单元与紧密耦合的栅极驱动器、输入/输出滤波和降低的EMI结合在一起。可进行详细调查的潜在领域包括：1.高频工作的变换器拓扑和控制设计2.无源器件设计与实现3.高频紧凑型变换器的组装和制造方法4.电路布局和EMI缓解策略