Characterisation of low radioactivity SiPMs and sensitivity studies for future LAr direct dark matter detection experiments

硅光电倍增管（SiPM）技术近年来发展迅速，具有光子探测效率高、功耗低、单光子灵敏度高、结构紧凑、鲁棒性好、定位精度高、时间分辨率高等特点。近年来的研究进展表明，sipm可以替代传统的光电倍增管来探测稀有气体探测器中的闪烁光。为了充分利用SiPM技术的优异性能，有必要了解和模拟其运行的相关特征。本项目旨在通过研究暗计数率、串扰、脉冲后、增益、时间分辨率、声噪比（SNR）和击穿电压等特征，表征为DarkSide-20k直接暗物质探测实验生产的尖端硅光传感器的性能。在曼彻斯特测量的传感器的性能特征将用于更新DarkSide探测器对暗物质相互作用的响应模拟，并在数据采集开始时为数据分析优化和实验最终暗物质灵敏度的估计提供信息。这些研究也将用于未来量子传感器设计的研发，用于未来实验，需要使用在真空紫外范围内操作光子信号的高效率低放射性大面积光敏传感器阵列。

Silicon Photomultiplier (SiPM) technology has advanced in recent years with better photon detection efficiency, low power consumption, single-photon sensitivity, compactness, robustness, high precision position, and time resolution. The recent advancement has shown SIPMs as an alternative to the traditionally used photomultiplier tube in detecting scintillation light in noble gas detectors. To fully benefit from the excellent performance of SiPM technology, it is necessary to understand and simulate the features concerned with their operation. This project aims to characterise the performance of cutting-edge silicon photosensors produced for the DarkSide-20k direct dark matter detection experiment through study of features such as the dark count rate, cross talk, after pulsing, gain, time resolution, Sound to noise ratio (SNR), and breakdown voltage. The performance characteristics of the sensors measured in Manchester will be used to inform an updated simulation of the response of the DarkSide detector to dark matter interactions and inform data analysis optimisation and estimates of the ultimate dark matter sensitivity of the experiment when data-taking begins.These studies will also be used to inform R&D toward the design of future quantum sensors for future experiments requiring the use of high efficiency low radioactivity large-area photosensor arrays operating with photon signals in the vacuum ultraviolet range.