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Characterisation of low radioactivity SiPMs and sensitivity studies for future LAr direct dark matter detection experiments

低放射性 SiPM 的表征和未来 LAr 直接暗物质探测实验的灵敏度研究

基本信息

批准号：
2659474
负责人：
金额：
--
依托单位：
University of Manchester
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2021
资助国家：
英国
起止时间：
2021 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2659474
关键词：
Characterisation low radioactivity SiPMs sensitivity

项目摘要

Silicon Photomultiplier (SiPM) technology has advanced in recent years with better photon detection efficiency, low power consumption, single-photon sensitivity, compactness, robustness, high precision position, and time resolution. The recent advancement has shown SIPMs as an alternative to the traditionally used photomultiplier tube in detecting scintillation light in noble gas detectors. To fully benefit from the excellent performance of SiPM technology, it is necessary to understand and simulate the features concerned with their operation. This project aims to characterise the performance of cutting-edge silicon photosensors produced for the DarkSide-20k direct dark matter detection experiment through study of features such as the dark count rate, cross talk, after pulsing, gain, time resolution, Sound to noise ratio (SNR), and breakdown voltage. The performance characteristics of the sensors measured in Manchester will be used to inform an updated simulation of the response of the DarkSide detector to dark matter interactions and inform data analysis optimisation and estimates of the ultimate dark matter sensitivity of the experiment when data-taking begins.These studies will also be used to inform R&D toward the design of future quantum sensors for future experiments requiring the use of high efficiency low radioactivity large-area photosensor arrays operating with photon signals in the vacuum ultraviolet range.

硅光电倍增管(SiPM)技术近年来发展起来，具有更好的光子探测效率、低功耗、单光子灵敏度、紧凑性、稳健性、高精度定位和时间分辨率等优点。最近的进展表明，在检测惰性气体探测器中的闪烁光时，SIPMS是传统使用的光电倍增管的替代方案。为了充分利用SiPM技术的优异性能，有必要了解和模拟与其工作相关的特性。该项目旨在通过研究暗计数率、串扰、脉冲后、增益、时间分辨率、声噪比(SNR)和击穿电压等特性来表征为Darkside-20k直接暗物质探测实验生产的尖端硅光传感器的性能。在曼彻斯特测量的传感器的性能特征将被用来为最新的模拟暗面探测器对暗物质相互作用的反应提供信息，并在数据采集开始时为数据分析优化和对实验的最终暗物质灵敏度的估计提供信息。这些研究还将被用于为未来的实验设计未来的量子传感器提供信息，未来的实验需要使用高效率、低放射性的大面积光电传感器阵列，在真空紫外线范围内使用光子信号操作。