Understanding 2D material memristors by atomic resolution imaging

通过原子分辨率成像了解二维材料忆阻器

• 批准号: 2737050
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2737050
• 关键词: Understanding; 2D; material; memristors; atomic

Resistive memory (ReRAM, also known as memristors) are a memory where the on and off states correspond to different resistances toggled by an applied potential. They are an emerging device of interest in 'beyond Moore' electronics, with potential applications in high-speed memory and neuromorphic 'brain-like' computing. New 2D materials, like monolayer MoS2, can now be used to make these devices atomically thin. However, there remains significant ambiguity over the atomic mechanisms behind this resistive switching property. Understanding this process at the fundamental atomic level would allow us to engineer better devices. This PhD project will use the state-of-the-art atomic resolution imaging facilities available at Warwick University to diagnose these underpinning mechanisms and thus inform the design of next-generation electronic devices. The student will conduct transmission electron microscopy (TEM) imaging of 2D material ReRAM devices while they are being operated inside the microscope. These operando experiments will directly reveal the atomic mechanisms that occur inside an operational memristor. The student will benefit from training in 2D material preparation and handling, semiconductor device fabrication, and TEM imaging techniques, as well as international collaboration with partners in Korea.

电阻式存储器（ReRAM，也称为忆阻器）是一种存储器，其中开和关状态对应于由施加的电势切换的不同电阻。它们是“超越摩尔”电子学领域的新兴感兴趣的器件，在高速存储器和神经形态“类脑”计算方面具有潜在的应用。新的2D材料，如单层MoS2，现在可以用来使这些器件达到原子级薄。然而，在这种阻变特性背后的原子机制上仍然存在重大的模糊性。在基本原子水平上理解这一过程将使我们能够设计出更好的设备。这个博士项目将使用沃里克大学最先进的原子分辨率成像设备来诊断这些基础机制，从而为下一代电子设备的设计提供信息。学生将在显微镜内操作时对2D材料ReRAM设备进行透射电子显微镜（TEM）成像。这些操作性实验将直接揭示发生在操作忆阻器内部的原子机制。学生将受益于2D材料制备和处理，半导体器件制造和TEM成像技术的培训，以及与韩国合作伙伴的国际合作。