To develop and characterise quantum dot based single photon emitters that operate in the telecoms C-band

该博士项目的目的是开发和表征运行在电信C波段的基于量子点的单光子发射器。该项目将重点放在InAs/GaAs和InAs/Si量子点结构上，最初的目标是分离和表征这些点。在此基础上，将制造出以光学或电子方式注入载流子的结构，目的是产生和验证O波段中的单光子发射。随后，该项目将专注于在量子点中注入铋等原子，以利用波段反交叉将发射波长移动到C波段。该项目将主要是试验性的，但也将需要结构的计算模型。

The aim of this PhD project is to develop and characterise quantum dot based single photon emitters that operate in the telecoms C-band. The project will focus on InAs/GaAs and InAs/Si quantum dot structures with the initial aim of isolating and characterising the dots. From these, structures will be fabricated to optically or electrically inject charge carriers with the aim of producing and verifying single photon emission in the O-band. Following this, the project will focus on implanting atoms such as bismuth into the quantum dots to take advantage of band anti-crossing to move the emission wavelength into the C-band. The project will primarily be experimental in nature but will also require computational modelling of the structures.&&