Extended Wavelength Ge-on-Si Single-photon Avalanche Diode Detectors

这是一项物理学博士研究项目。单光子探测器是许多新兴光子技术背后的关键部件。基于硅的可见光和近红外波长(400-1060 nm)的单光子探测是一项相对成熟的技术，已有几种有效的商业设备可用，但更长波长的单光子探测器仍在很大程度上处于实验阶段。锗吸收器层的加入使波长范围扩大到大于1550 nm的波长，使其与低损耗光纤窗口兼容。这种探测器能够探测波长位于特定大气传输窗口内的光子，以及红外气体吸收特性，特别是温室气体的吸收特性。本PHD将研究在Ge吸收材料中掺入锡以将波长范围扩展到2000 nm。

This is a PhD research project in Physics. Single--photon detectors are the key components behind many of the new and emerging photonic technologies. Single--photon detection at visible and near infrared wavelengths (in the range 400 to 1060 nm) based on silicon is a relatively mature technology with several efficient devices commercially available but single-photon detectors for longer wavelengths are still largely experimental. The inclusion of germanium absorber layers gives the opportunity to extend the wavelength range to greater than 1550nm wavelength fpr compatibility with low loss optical fibre windows. Such detectors are capable of detecting photons with wavelengths that lie in certain atmospheric transmission windows, as well as infrared gas absorption features, notably those of greenhouse gas. This PhD will examine the incorporation of Sn into the Ge absorber in order to extend the wavelength range to 2000nm wavelength.