New Materials for High Energy Colour X-ray Imaging
New Materials for High Energy Colour X-ray Imaging
批准号:
EP/D048737/1
负责人:
Robert Cernik
金额:
$383.92万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2006
资助国家:
英国
项目状态:
已结题
起止时间:
2006 至 --
中文摘要
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英文摘要
Advances in X-ray digital imaging over the last 15 years have revolutionised the way that we observe the world. For example, medical images are improving in resolution and clarity; the automotive and aerospace industries have used tomographic imaging to find faults, cracks and dislocations in sensitive components; the scanners used at airports for baggage surveillance have increased in sophistication and are often using substance recognition techniques and as a final example X-ray imaging cameras have been launched into space in order to provide more detailed information about the origins of our universe. However impressive these developments may be the technology of 3D imaging is severely limited by the currently available detector arrays. The origins of this limitation can be found in the materials that are currently used in these arrays. We wish to develop a new and novel range of semiconductor materials made from heavy elements ideally suited to making array detectors that will operate with high energy X-rays. At present it is not possible to obtain defect free material of area greater than about one square cm and even this cannot be guaranteed. We will rectify this problem and deliver high quality semiconductor material for our applications in addition to supplying material for many other UK applications that are not specifically part of our consortium's proposal.These new materials will have instant applications across the sciences. The use of such materials in these cases is not merely incremental; they will enable entirely new materials to be examined and will give us images of unparalleled quality and information content. We will use the many wavelengths (colour information) present in X-ray sources to fingerprint materials as well as image them. High energy X-rays have the ability to penetrate deeply into materials allowing the examination of dense objects such as welds in steel, geological core sections bearing oil or gas or for the internal observation of chemical reactions inside heavy plant or machinery. The use of higher energy X-rays has a further advantage in medical diagnosis delivering clearer images with lower radiation doses. At present no suitable materials exist anywhere in the world that will satisfy the demanding technical requirements of high energy X-ray imaging. We will establish a UK technology base for the development and production of high purity heavy semiconductor materials. These materials are promising candidate semiconductors that combine high efficiency with good bulk charge transport properties. Over recent years we have made considerable progress in developing the growth of suitable semiconductors. We will develop a process to grow wafers with excellent charge transport which has the potential for scale-up to larger wafer diameters in the later phase of the project. The material will be characterised in terms of electrical and charge transport properties, and this information will be used to optimise the growth and dopant regimes. We will then process the material into detector devices; this will require the development of metal-semiconductor contacts and passivation treatments. This will be carried out at CCLRC and Surrey using dedicated clean rooms. These working devices will then be utilised in the research programmes of Manchester, London, Liverpool Daresbury and the diamond synchrotron light source. These high purity wafers will also be made available for a much wider range of research applications that will be opened up by this manufacturing project.A unique feature of our collaboration is our ability to develop the new materials as well as utilise them with full detector systems. We see this as a vital step in delivering the materials to a diverse scientific audience as well as a route to commercial exploitation. The opportunities for the latter are significant.
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DOI:
10.1109/tns.2008.2011551
发表时间:
2009-06
期刊:
IEEE Transactions on Nuclear Science
影响因子:
1.8
作者:
[E. Cook;S. Pani;L. George;S. Hardwick;J. Horrocks;R. Speller]
通讯作者:
E. Cook;S. Pani;L. George;S. Hardwick;J. Horrocks;R. Speller
An in situ high pressure-high temperature powder diffraction study of the formation of a precursor phase of bismuth manganite
亚锰酸铋前驱相形成的原位高压高温粉末衍射研究
DOI:
10.1016/j.ceramint.2010.07.014
发表时间:
2010
期刊:
Ceramics International
影响因子:
5.2
作者:
[Cernik R]
通讯作者:
Cernik R
Heteroepitaxial growth and properties of crystals of CdTe on GaAs substrates
GaAs 衬底上 CdTe 晶体的异质外延生长及其性能
DOI:
10.1117/12.739476
发表时间:
2007
期刊:
影响因子:
--
作者:
[Choubey A]
通讯作者:
Choubey A
Growth of cadmium telluride crystals for sensor use
传感器用碲化镉晶体的生长
DOI:
10.1109/maes.2006.1684263
发表时间:
2006
期刊:
IEEE Aerospace and Electronic Systems Magazine
影响因子:
3.6
作者:
[Cantwell B]
通讯作者:
Cantwell B
Performance Evaluation of 98 CZT Sensors for Their Use in Gamma-Ray Imaging
98 CZT 传感器在伽马射线成像中的应用性能评估
DOI:
10.1109/tns.2008.2001681
发表时间:
2008
期刊:
IEEE Transactions on Nuclear Science
影响因子:
1.8
作者:
[Dedek N]
通讯作者:
Dedek N
共 8 条
HEXITEC: Translation grant. The application of colour X-ray imaging
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批准号:EP/H046577/1
-
项目类别:Research Grant
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资助金额:$158.19万
-
财政年份:2011
-
负责人:Robert Cernik
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依托单位:
Large Field X-ray tomographic Imaging
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批准号:CC/D000157/2
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项目类别:Research Grant
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资助金额:$25.98万
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财政年份:2008
-
负责人:Robert Cernik
-
依托单位:
国内基金
海外基金
Capture and Release of Droplets Using Advanced Materials for High Technology Applications
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批准号:52073127
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项目类别:面上项目
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资助金额:58.0万元
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批准年份:2020
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负责人:Alidad Amirfazli
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依托单位:
Journal of Materials Science & Technology
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批准号:51024801
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项目类别:专项基金项目
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资助金额:24.0万元
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批准年份:2010
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负责人:罗东
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依托单位: