Nanoscale Re-writable Non-Volatile Polymer Memory Arrays

第一个Grant提案的目的是探索一种制造聚合物存储器件的纳米存储阵列或芯片的新方法。所提议的芯片将按照交叉式结构构造，单个器件将通过在两个金属电极之间沉积聚合物材料和有机小分子的混合物来制备。当施加电压时，这些器件显示两种电导状态。然后，可以在非易失性存储设备中使用这两种状态。这些存储器件的电流-电压(I-V)特性通常表现出双稳态，这被用来实现存储器件的基本功能。拟议方案的目的是改进目前困扰该领域的各种缺点，实现可行的聚合物存储设备，然后将其组装成具有成本效益和高存储容量的存储芯片。对于纳米尺度的存储器阵列的制造，将使用冲压技术。

The aim of the First Grant proposal is to explore a novel method of fabricating nano-memory arrays or chips of polymer memory devices. The proposed chip is to be structured according to a cross-bar architecture and the individual devices will be prepared by depositing a blend of a polymer material and small organic molecules between two metal electrodes. These devices show two electrical conductance states when voltage is applied. These two states can then be utilised in non-volatile memory devices. The current-voltage (I-V) characteristics of these memory devices generally exhibit bi-stability, which is exploited for thw essential function of memory devices. The aim of the proposed programme is to improve upon the various shortcomings that plague the field currently and realise viable polymer memory devices, which can then be assembled into a cost efficient and high storage capacity memory chip. For the fabrication of the memory arrays in the nano-scale the stamping technique will be used.