Building Novel Solid State Electric Double Layer Transistors with Interface Engineering of Ionic Conductive Oxide Superlattices

点击翻译按钮获取中文摘要

Transistors are the fundamental building blocks of modern electronic devices, which continue to diminish in size to achieve higher speeds. However, the development of this technology has been impeded by low carrier density in the gate dielectric materials. Therefore, increasing the attainable carrier density has become critically important for both scientific research and industrial applications. This project aims at experimental and theoretical development of advanced ionic conductive oxide superlattices with colloidal nanocubes for novel solid state electric double layer transistors, which possess ultrahigh carrier density and mobility, to surmount the fundamental limit of current silicon semiconductor technologies.