Building Novel Solid State Electric Double Layer Transistors with Interface Engineering of Ionic Conductive Oxide Superlattices

利用离子导电氧化物超晶格界面工程构建新型固态双电层晶体管

• 批准号: FT140100032
• 负责人: Prof Dewei Chu
• 金额: $ 50.7万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: ARC Future Fellowships
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-10-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/FT140100032
• 关键词: Building; Novel; Solid; State; Electric

Transistors are the fundamental building blocks of modern electronic devices, which continue to diminish in size to achieve higher speeds. However, the development of this technology has been impeded by low carrier density in the gate dielectric materials. Therefore, increasing the attainable carrier density has become critically important for both scientific research and industrial applications. This project aims at experimental and theoretical development of advanced ionic conductive oxide superlattices with colloidal nanocubes for novel solid state electric double layer transistors, which possess ultrahigh carrier density and mobility, to surmount the fundamental limit of current silicon semiconductor technologies.

晶体管是现代电子设备的基本构建模块，其尺寸不断减小以实现更高的速度。然而，该技术的发展受到栅极电介质材料中低载流子密度的阻碍。因此，增加可达到的载流子密度对于科学研究和工业应用都变得至关重要。本项目旨在通过实验和理论研究开发具有胶体纳米立方体的先进离子导电氧化物超晶格，用于新型固态双电层晶体管，该晶体管具有良好的载流子密度和迁移率，以克服当前硅半导体技术的基本限制。