Structures, kinetics, and energetics of reactive intermediates in hot-wire chemical vapor deposition of Si-containing films

含硅薄膜热线化学气相沉积反应中间体的结构、动力学和能量学

• 批准号: 283270-2007
• 负责人: Shi, Yujun
• 金额: $ 3.06万
• 依托单位: University of Calgary
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2008
• 资助国家: 加拿大
• 起止时间: 2008-01-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=395625
• 关键词: Structures; kinetics; energetics; reactive; intermediates

The research program involves the studies of kinetics, structures and energetics of gas-phase reactive intermediates formed in the hot-wire chemical vapor deposition (HWCVD) process of Si-containing semiconductor thin films. It also involves the application of the scientific findings from gas phase studies to optimize the film formation process. The gas phase reactive species are the major source of film growth precursors in HWCVD. They are particularly important in determining the film growth rate and film properties. In our research, laser-based ionization techniques, such as vacuum ultraviolet laser single photon ionization (SPI) and laser-induced electron impact ionization (LIEI), will be used in tandem with time-of-flight mass spectrometry (TOF MS) to identify the reactive species and to understand the chemical kinetics that produce precursor species for film growth. We will also utilize several laser spectroscopic techniques, including resonance-enhanced multiphoton ionization (REMPI), zero kinetic energy (ZEKE) photoelectron / mass analyzed threshold ionization (MATI) spectroscopy, to characterize the rovibronic structures of the excited neutrals and ground state cations, and to determine the accurate ionization energies of the reactive intermediates. The research will lead to the development of highly sensitive and selective diagnostic tools for these species. It will also provide fundamental properties of the reactive intermediates, which are extremely difficult to obtain, yet invaluable in the study of radical-radical and radical-molecule reactions. Finally, we will employ various surface diagnostic methods to examine the properties of the thin films produced at various deposition conditions to achieve general design parameters for HWCVD equipment. Together, this research will contribute to a deep molecular level understanding of the fundamental chemistry and physics involved in the HWCVD processes. This knowledge is essential to develop a comprehensive deposition model and to provide important guidance toward rational optimization of film formation in HWCVD to obtain superior quality films for industrial applications.

该研究项目涉及含硅半导体薄膜热线化学气相沉积（HWCVD）过程中形成的气相反应中间体的动力学、结构和能量学研究。它还涉及应用气相研究的科学发现来优化成膜过程。气相活性物质是 HWCVD 中薄膜生长前驱体的主要来源。它们对于确定薄膜生长速率和薄膜性能特别重要。在我们的研究中，基于激光的电离技术，例如真空紫外激光单光子电离（SPI）和激光诱导电子轰击电离（LIEI），将与飞行时间质谱（TOF MS）结合使用，以识别活性物质并了解产生用于薄膜生长的前体物质的化学动力学。我们还将利用多种激光光谱技术，包括共振增强多光子电离（REMPI）、零动能（ZEKE）光电子/质量分析阈值电离（MATI）光谱，来表征激发中性粒子和基态阳离子的振动电子结构，并确定反应中间体的准确电离能。该研究将为这些物种开发高度敏感和选择性的诊断工具。它还将提供反应中间体的基本特性，这些中间体极难获得，但在自由基-自由基和自由基-分子反应的研究中具有无价的价值。最后，我们将采用各种表面诊断方法来检查在各种沉积条件下产生的薄膜的性能，以获得 HWCVD 设备的通用设计参数。总之，这项研究将有助于在分子水平上深入了解 HWCVD 过程中涉及的基础化学和物理。这些知识对于开发综合沉积模型至关重要，并为 HWCVD 中薄膜形成的合理优化提供重要指导，以获得适合工业应用的优质薄膜。