Staebler-Wronski effect in tritiated amorphous silicon

氚化非晶硅中的斯塔布勒-朗斯基效应

• 批准号: 341444-2008
• 负责人: Gaspari, Franco
• 金额: $ 0.95万
• 依托单位: University of Ontario Institute of Technology
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2009
• 资助国家: 加拿大
• 起止时间: 2009-01-01 至 2010-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=429646
• 关键词: Staebler; Wronski; effect; tritiated; amorphous

Hydrogenated amorphous silicon (a-Si:H)-represents one of the most important materials in the areas of photovoltaics and microelectronics. The introduction of tritium (an isotope of hydrogen) into amorphous materials has spurred fundamental studies on the nature of dangling bond defects and metastability. In 1995 the applicant initiated a systematic research of the properties of tritiated amorphous silicon. Preliminary studies have shown that tritium can be permanently bonded in amorphous silicon, thereby rendering this radioactive substance relatively safe. Phenomena associated with the decay of tritium offer a very powerful new tool in the study of amorphous semiconductors. In particular, Tritium decay within the a-Si:H network can be used to simulate and analyze the Staebler-Wronski (S-W) effect, which is responsible for the degradation of the opto-electronic properties of a-Si:H. Furthermore, the energy released during the decay can be harnessed and transformed into other, useful and harmless, forms of energy. The main objectives of this proposal are: to achieve a better understanding of the physical properties of amorphous semiconductors and of the effects of tritium in amorphous semiconductors. The research will be conducted at both theoretical and experimental levels. In addition, the energy "crunch" has brought the "nuclear solution" back to the forefront, and the Canadian nuclear plants, based on the CANDU reactor, represent a major and unique source of Tritium gas. This research will lead to the development and to the safe utilization of tritium in microelectronic devices, having the potential to benefit Canadian industry via exploration of practical applications of tritiated amorphous semiconductors, including self-powered light emitting devices and batteries. At least three M.Sc. students in the recently approved Master in Materials Science program will be involved in the research over the course of 5 years; several undergraduate students will also be involved in summer projects. The students will be provided training to: i) use Ab Initio Molecular Dynamics (AIMD) to simulate optoelectronic properties of semiconductors and other materials, ii) perform the experimental measurements required for the project.

氢化非晶硅（a-Si:H）是光伏和微电子领域最重要的材料之一。将氚（氢的同位素）引入非晶材料激发了对悬挂键缺陷和亚稳态性质的基础研究。 1995年，申请人开始对氚化非晶硅的性能进行系统研究。初步研究表明，氚可以永久结合在非晶硅中，从而使这种放射性物质相对安全。与氚衰变相关的现象为非晶半导体的研究提供了一个非常强大的新工具。特别是，a-Si:H 网络内的氚衰变可用于模拟和分析 Staebler-Wronski (S-W) 效应，该效应是 a-Si:H 光电性能退化的原因。此外，衰变过程中释放的能量可以被利用并转化为其他有用且无害的能量形式。该提案的主要目标是：更好地了解非晶半导体的物理特性以及氚在非晶半导体中的作用。该研究将在理论和实验层面进行。此外，能源“紧缩”使“核解决方案”重新成为人们关注的焦点，而基于CANDU反应堆的加拿大核电站代表了主要且独特的氚气来源。这项研究将促进氚在微电子设备中的开发和安全利用，通过探索氚化非晶半导体（包括自供电发光设备和电池）的实际应用，有可能使加拿大工业受益。至少三个硕士学位最近批准的材料科学硕士项目的学生将参与为期 5 年的研究；一些本科生也将参与暑期项目。将为学生提供以下培训：i) 使用从头算分子动力学 (AIMD) 模拟半导体和其他材料的光电特性，ii) 执行项目所需的实验测量。