Staebler-Wronski effect in tritiated amorphous silicon

氚化非晶硅中的斯塔布勒-朗斯基效应

基本信息

  • 批准号:
    341444-2008
  • 负责人:
  • 金额:
    $ 0.95万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Discovery Grants Program - Individual
  • 财政年份:
    2012
  • 资助国家:
    加拿大
  • 起止时间:
    2012-01-01 至 2013-12-31
  • 项目状态:
    已结题

项目摘要

Hydrogenated amorphous silicon (a-Si:H)-represents one of the most important materials in the areas of photovoltaics and microelectronics. The introduction of tritium (an isotope of hydrogen) into amorphous materials has spurred fundamental studies on the nature of dangling bond defects and metastability. In 1995 the applicant initiated a systematic research of the properties of tritiated amorphous silicon. Preliminary studies have shown that tritium can be permanently bonded in amorphous silicon, thereby rendering this radioactive substance relatively safe. Phenomena associated with the decay of tritium offer a very powerful new tool in the study of amorphous semiconductors. In particular, Tritium decay within the a-Si:H network can be used to simulate and analyze the Staebler-Wronski (S-W) effect, which is responsible for the degradation of the opto-electronic properties of a-Si:H. Furthermore, the energy released during the decay can be harnessed and transformed into other, useful and harmless, forms of energy. The main objectives of this proposal are: to achieve a better understanding of the physical properties of amorphous semiconductors and of the effects of tritium in amorphous semiconductors. The research will be conducted at both theoretical and experimental levels. In addition, the energy "crunch" has brought the "nuclear solution" back to the forefront, and the Canadian nuclear plants, based on the CANDU reactor, represent a major and unique source of Tritium gas. This research will lead to the development and to the safe utilization of tritium in microelectronic devices, having the potential to benefit Canadian industry via exploration of practical applications of tritiated amorphous semiconductors, including self-powered light emitting devices and batteries. At least three M.Sc. students in the recently approved Master in Materials Science program will be involved in the research over the course of 5 years; several undergraduate students will also be involved in summer projects. The students will be provided training to: i) use Ab Initio Molecular Dynamics (AIMD) to simulate optoelectronic properties of semiconductors and other materials, ii) perform the experimental measurements required for the project.
氢化非晶硅(a-Si:H)-代表了光电子学和微电子学领域中最重要的材料之一。氚(氢的一种同位素)引入非晶态材料,促进了对悬挂键缺陷和亚稳态性质的基础研究。1995年,申请人开始对氚化非晶硅的性质进行系统研究。初步研究表明,氚可以永久结合在非晶硅中,从而使这种放射性物质相对安全。与氚衰变有关的现象为研究非晶半导体提供了一个非常有力的新工具。特别地,a-Si:H网络中的氚衰变可以用于模拟和分析Staebler-Wronski(S-W)效应,该效应是a-Si:H光电性能退化的原因。此外,衰变过程中释放的能量可以被利用并转化为其他有用和无害的能量形式。该提案的主要目标是:实现更好地了解非晶半导体的物理特性和氚在非晶半导体中的影响。研究将在理论和实验两个层面进行。此外,能源“危机”使“核解决办法”重新成为首要问题,而加拿大的核电站以坎杜反应堆为基础,是氚气的主要和独特来源。这项研究将导致氚在微电子器件中的开发和安全利用,通过探索氚化非晶半导体的实际应用,包括自供电发光器件和电池,有可能使加拿大工业受益。在最近批准的材料科学硕士课程中,至少有三名理学硕士学生将参与5年的研究;几名本科生也将参与暑期项目。学生将接受以下培训:i)使用Ab Initio分子动力学(AIMD)模拟半导体和其他材料的光电特性,ii)执行项目所需的实验测量。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
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Gaspari, Franco其他文献

Optical properties of Si/SiO2 nano structured films induced by laser plasma ionization deposition
  • DOI:
    10.1016/j.optcom.2020.125297
  • 发表时间:
    2020-05-01
  • 期刊:
  • 影响因子:
    2.4
  • 作者:
    Abed, Meisam Moghareh;Gaspari, Franco;Kiani, Amirkianoosh
  • 通讯作者:
    Kiani, Amirkianoosh

Gaspari, Franco的其他文献

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{{ truncateString('Gaspari, Franco', 18)}}的其他基金

Physics and applications of Nanostructured materials for Photovoltaics and Microwave Electronics
光伏和微波电子纳米结构材料的物理和应用
  • 批准号:
    DDG-2018-00012
  • 财政年份:
    2019
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Development Grant
Physics and applications of Nanostructured materials for Photovoltaics and Microwave Electronics
光伏和微波电子纳米结构材料的物理和应用
  • 批准号:
    DDG-2018-00012
  • 财政年份:
    2018
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Development Grant
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2011
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2010
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2009
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2008
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual

相似海外基金

Monodromy of the Wronski map
朗斯基地图的单一性
  • 批准号:
    465128-2014
  • 财政年份:
    2014
  • 资助金额:
    $ 0.95万
  • 项目类别:
    University Undergraduate Student Research Awards
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2011
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2010
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2009
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in tritiated amorphous silicon
氚化非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    341444-2008
  • 财政年份:
    2008
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Discovery Grants Program - Individual
Staebler-Wronski effect in amorphous silicon
非晶硅中的斯塔布勒-朗斯基效应
  • 批准号:
    118041-1991
  • 财政年份:
    1991
  • 资助金额:
    $ 0.95万
  • 项目类别:
    Strategic Projects - Group
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