Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation

太赫兹自由电子激光辐射下低维半导体系统和半导体纳米结构的光电特性

• 批准号: ARC : LX0231874
• 负责人: Dr Wen Xu
• 金额: $ 2.88万
• 依托单位: University of Wollongong
• 依托单位国家: 澳大利亚
• 项目类别: Linkage - International
• 财政年份: 2003
• 资助国家: 澳大利亚
• 起止时间: 2003-01-01 至 2004-12-31
• 项目状态: 已结题
• 来源: https://researchdata.edu.au/optoelectronic-properties-low-laser-radiation/63915
• 关键词: Optoelectronic; properties; low; dimensional; semiconductor

Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation. The recent application of terahertz (THz) free-electron lasers (FELs) to scientific investigation into low-dimensional semiconductor systems and semiconductor nanostructures has opened up a new field of research in semiconductor optoelectronics. This project will conduct a joint experimental and theoretical study of how these novel systems interact with intense THz laser fields. Experimentally, we plan to use Beijing FELs in China to study optoelectronic properties in GaAs-and GaN based systems. Theoretically, we intend developing fundamental new approaches to theory of electron interactions with intense laser fields in semiconductors and relating theoretical results to experiments and experimental findings.

低维半导体系统和半导体纳米结构在太赫兹自由电子激光辐射下的光电特性。近年来，太赫兹（THz）自由电子激光器（FELs）在低维半导体系统和半导体纳米结构科学研究中的应用为半导体光电子学开辟了一个新的研究领域。该项目将对这些新型系统如何与强太赫兹激光场相互作用进行联合实验和理论研究。实验上，我们计划利用中国的北京FELs来研究gaas和GaN基系统的光电特性。从理论上讲，我们打算发展基本的新方法来研究半导体中电子与强激光场相互作用的理论，并将理论结果与实验和实验结果联系起来。