Advanced reactive ion etching system for micro- and nanofabrication

用于微米和纳米加工的先进反应离子蚀刻系统

• 批准号: 458810-2014
• 负责人: Peter, YvesAlain
• 金额: $ 10.85万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Research Tools and Instruments - Category 1 (<$150,000)
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=542049
• 关键词: Advanced; reactive; ion; etching; system

The Microfabrication laboratory is willing to offer the possibility of dry etching a broad range of materials serving most needs of our large users community. It includes dry etching of metals (Al, Cr, Ti, Ni), semiconductors (GaAs, Ge) and exotic materials (ITO, LiNbO3). Although wet etching of some of these materials is possible, the quality of wet etching cannot match dry etching in many aspects such as verticality, uniformity, critical dimensions and reproducibility. Dry etching of some of the above mentioned materials requires chlorine-based chemistry (Cl2, BCl3). The use of such toxic gases requires special design to protect the user and the environment. The presence of a loadlock is a major requirement to confine gases and the reaction products in the reaction chamber. Also a turbomolecular pump is essential to reach high vacuum levels after etching in order to insure the proper evacuation of dangerous species. The mechanical and software protection feature prevent any exposure of the user to any hazardous materials. The automatic control of equipment components and blocks guarantees a good reproducibility of etching results.

微加工实验室愿意提供干蚀刻各种材料的可能性，以满足我们大型用户社区的大多数需求。它包括干蚀刻金属（Al, Cr, Ti, Ni），半导体（GaAs, Ge）和外来材料（ITO, LiNbO3）。虽然湿法蚀刻是可能的，但湿法蚀刻的质量在垂直度、均匀性、临界尺寸和再现性等许多方面都无法与干法蚀刻相比。干蚀刻的一些上述材料需要氯基化学（Cl2, BCl3）。使用此类有毒气体需要特殊设计，以保护用户和环境。负载锁的存在是将气体和反应产物限制在反应室中的主要要求。此外，在蚀刻后要达到高真空水平，涡轮分子泵是必不可少的，以确保危险物质的适当疏散。机械和软件保护功能，防止任何用户暴露于任何有害物质。设备组件和块的自动控制保证了蚀刻结果的良好再现性。