Spin-filter based nano devices for information processing

传统的电子设备使用电子电荷的存储和传输来实现信息技术。人们可以通过引入自旋自由度来进一步研究这个领域，这被称为自旋电子学。我们将整合一些最先进的自旋为基础的技术对信息处理应用。它为我们提供了前所未有的机会，创造具有先进功能和降低功耗的新型设备。 我们的研究重点是一个新出现的现象，自旋过滤效应。我们可以产生和分析自旋信息依赖于量子隧穿概率的剪裁。这种方法使我们不再需要磁性电极，从而使我们能够构建具有新颖和更复杂功能的设备。为了促进对自旋过滤系统的更深入理解并对其进行优化，我们从简单的Eu硫属化物开始作为原理演示，然后转向用于室温操作的更复杂的铁氧体。我们将研究自旋过滤现象与另外两个热门话题，对称过滤（MgO）和铁电性（BiFeO 3）的结合，以实现它们在MRAM和FeRAM（磁性/铁电随机存取存储器）技术中的最终应用。 在该项目的过程中，学生将接受材料科学，微/纳米制造以及表面和运输表征方面的培训。他们的进步和知识也将受益于计划于2012年底投入使用的多室薄膜沉积设施。这个超高真空集群沉积设施是加拿大同类设施之一，将使我们的学生获得许多尖端技术。

Traditional electronic devices use the storage and transport of electron charges for information technology. One can take the field one step further by incorporating the spin degrees of freedom, which is known as spintronics. We will integrate some of the most advanced spin-based technologies towards information processing applications. It provides us with unprecedented opportunities to create novel devices with advanced functionalities and reduced power consumption. Our proposed research focuses on a newly emerging phenomenon, the spin filtering effect. We can generate and analyze spin information relying on tailoring of quantum tunneling probabilities. This approach frees us from the need for magnetic electrodes, thus allows us to construct devices with novel and more complicated functionality. To facilitate deeper understanding on the spin filtering system and to optimize it, we start with the simpler Eu chalcogenides as a demonstration of principle, and move on to the more complicated ferrites for room temperature operations. We will look into the combination of spin filtering phenomenon with another two hot topics, symmetry filtering (MgO) and ferroelectricity (BiFeO3), towards their ultimate applications in the MRAM and FeRAM (Magnetic/Ferroelectric Random Access Memory) technologies. During the course of this project, students will be trained in materials science, micro/nano-fabrications, as well as surface and transport characterizations. Their progress and knowledge will also benefit from a multichamber thin film deposition facility that is scheduled to be in commission at the end of 2012. This ultra-high-vacuum cluster deposition facility is one of its kind in Canada, and will give our students access to many of the cutting-edge technologies.