Spin-filter based nano devices for information processing

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Traditional electronic devices use the storage and transport of electron charges for information technology. One can take the field one step further by incorporating the spin degrees of freedom, which is known as spintronics. We will integrate some of the most advanced spin-based technologies towards information processing applications. It provides us with unprecedented opportunities to create novel devices with advanced functionalities and reduced power consumption. Our proposed research focuses on a newly emerging phenomenon, the spin filtering effect. We can generate and analyze spin information relying on tailoring of quantum tunneling probabilities. This approach frees us from the need for magnetic electrodes, thus allows us to construct devices with novel and more complicated functionality. To facilitate deeper understanding on the spin filtering system and to optimize it, we start with the simpler Eu chalcogenides as a demonstration of principle, and move on to the more complicated ferrites for room temperature operations. We will look into the combination of spin filtering phenomenon with another two hot topics, symmetry filtering (MgO) and ferroelectricity (BiFeO3), towards their ultimate applications in the MRAM and FeRAM (Magnetic/Ferroelectric Random Access Memory) technologies. During the course of this project, students will be trained in materials science, micro/nano-fabrications, as well as surface and transport characterizations. Their progress and knowledge will also benefit from a multichamber thin film deposition facility that is scheduled to be in commission at the end of 2012. This ultra-high-vacuum cluster deposition facility is one of its kind in Canada, and will give our students access to many of the cutting-edge technologies.