Pulsed water jet treatments of the surfaces of metal alloys for biomedical applications
Pulsed water jet treatments of the surfaces of metal alloys for biomedical applications
批准号:
484151-2015
负责人:
Monchesky, Theodore
金额:
$1.82万
依托单位:
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Each year, over 100,000 Canadians require knee or hip replacement. Current technology uses a titanium alloy
to attach the implant to the bone, but problems arise at the interface that could be solved with pulsed water jet
(PWJ) technology developed at VLN Advanced Technologies Inc. The surface of the alloy is typically
roughened by grit blasting with aluminum oxide particles to promote cell growth on the device. However, the
particles get imbedded into the titanium surface. Once inside the patient, the particles can become dislodged
and lead to cell death in the surrounding tissue and the loosening of the implant, the leading cause for revision
surgery. In contrast, pulsed water jets use ultrasound to break a continuous water stream into a series of high
speed pulses that create mechanical erosion by cyclic loading of the target without embedding any foreign
material.
Together with VLN, we will develop a cost effective way of using PWJs to eliminate the need for grit blasting
and create a better biocompatible surface. For good adhesion of a titanium implant in bone, the medical
implant needs to have surface features with sizes that span the micron scale down to the nano-scale in order to
mimic the surrounding biological textures. Metallurgical alloys that naturally phase separate into two
components create patterns in their grain structure with multi-length scale features that can imitate those of
biological systems. Surgical titanium alloy separates in to a stronger and weaker component. We will design
the techniques to mechanically etch away the weaker component with pulsed water jets and leave behind a
rough surface with features on the micron- and nano-length scales. The physical structure, chemistry and
mechanical properties of the treated surfaces will be characterized with a suite of tools at Dalhousie University
to identify the optimal PWJ parameters. Finally we will explore the possibility of engineering the surface
morphology by modifying the grain structure in titanium alloys currently being developed at Dalhousie.
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资助金额:$1.53万
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Spintronics with chiral magnets
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资助金额:$1.53万
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Spintronics with chiral magnets
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批准号:262486-2013
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.53万
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依托单位:
Spintronics with chiral magnets
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资助金额:$1.53万
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依托单位:
Spintronics with chiral magnets
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批准号:262486-2013
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.53万
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财政年份:2013
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依托单位:
Si and Ge based spintronic materials
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批准号:262486-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.46万
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财政年份:2011
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依托单位:
Si and Ge based spintronic materials
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批准号:262486-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.46万
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财政年份:2010
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依托单位:
Si and Ge based spintronic materials
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批准号:262486-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.46万
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财政年份:2009
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负责人:Monchesky, Theodore
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依托单位:
Si and Ge based spintronic materials
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批准号:262486-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.46万
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财政年份:2008
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负责人:Monchesky, Theodore
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依托单位:
Si and Ge based spintronic materials
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批准号:262486-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.46万
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财政年份:2007
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负责人:Monchesky, Theodore
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依托单位:
Auger electron spectrometer for molecular beam epitaxy system
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批准号:344707-2007
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资助金额:$3.95万
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财政年份:2006
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负责人:Monchesky, Theodore
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依托单位:
Spintronics with Group - IV magnetic semiconductors
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批准号:262486-2003
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.84万
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财政年份:2006
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负责人:Monchesky, Theodore
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依托单位:
Spintronics with Group - IV magnetic semiconductors
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批准号:262486-2003
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.84万
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财政年份:2005
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负责人:Monchesky, Theodore
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依托单位:
Spintronics with Group - IV magnetic semiconductors
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批准号:262486-2003
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.84万
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财政年份:2004
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负责人:Monchesky, Theodore
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依托单位:
Spintronics with Group - IV magnetic semiconductors
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批准号:262486-2003
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.84万
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财政年份:2003
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负责人:Monchesky, Theodore
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依托单位:
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