Room Temperature Magnetoelectric & Multiferroic Films and Composites for novel Devices

常温磁电

• 批准号: 261662-2013
• 负责人: Pignolet, Alain
• 金额: $ 2.99万
• 依托单位: Institut national de la recherche scientifique
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2016
• 资助国家: 加拿大
• 起止时间: 2016-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=594622
• 关键词: Room; Temperature; Magnetoelectric; Multiferroic; Films

The next generation of miniaturized devices will increasingly rely on "smart materials", materials with the uncanny ability to respond to an external stimulus by abruptly changing their properties in a reversible manner. Multiferroics, exhibiting at once, a magnetic and a ferroelectric ordering are potentially such smart materials. While the interplay between magnetic ordering and ferroelectricity in these compounds is presently one of the unanswered fundamental questions in condensed matter physics, the occurrence of both orders simultaneously is rare and very often occurs at low temperature. The recent emergence of thin films and nanostructures of materials with good multiferroic properties at room temperature has been a turning point opening the way for using multiferroics/magnetoelectrics into novel integrated devices, in areas such as sensing, energy conversion, as well as photonics and high-frequency electronics for telecommunication.

下一代微型设备将越来越依赖“智能材料”，这些材料具有通过以可逆方式突然改变其特性来响应外部刺激的不可思议的能力。同时表现出磁性和铁电有序性的多铁性材料可能是此类智能材料。虽然这些化合物中磁有序性和铁电性之间的相互作用是目前凝聚态物理中尚未解答的基本问题之一，但这两种有序性同时出现的情况很少见，而且经常发生在低温下。最近出现的在室温下具有良好多铁性的薄膜和纳米结构材料成为了一个转折点，为将多铁性/磁电性应用于传感、能量转换以及电信用光子学和高频电子学等领域的新型集成器件开辟了道路。