growth and structure determination of thin films for future electronic technologies

未来电子技术薄膜的生长和结构测定

• 批准号: RGPIN-2017-06069
• 负责人: Nogami, Jun
• 金额: $ 1.53万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=633011
• 关键词: growth; structure; determination; thin; films

Many emerging or future technologies depend on the atomic level control of materials, and the optimization of such materials requires, in turn, an atomic level understanding of the materials properties. This is particularly true in applications related to microelectronics, where critical device performance depends on the detailed properties of materials, surfaces, and interfaces on length scales from individual atomic layers up to the sub micron scale. In this proposal, we will take advantage of a newly acquired low temperature scanning tunneling microscope (STM) to broaden the scope of our previous research on the atomic structure of surfaces and thin films to two areas of application.

许多新兴或未来的技术依赖于材料的原子级控制，而这些材料的优化反过来又需要对材料特性的原子级理解。这在与微电子相关的应用中尤其如此，其中关键器件性能取决于从单个原子层到亚微米尺度的长度尺度上的材料、表面和界面的详细特性。在这个建议中，我们将利用新获得的低温扫描隧道显微镜（STM），扩大我们以前的研究范围的表面和薄膜的原子结构的两个应用领域。