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A new solar DC optimizer based on advanced GaN devices

A new solar DC optimizer based on advanced GaN devices
基于先进 GaN 器件的新型太阳能直流优化器
批准号:
530274-2018
负责人:
Pahlevaninezhad, Majid
金额:
$1.82万
依托单位:
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2018
资助国家:
加拿大
项目状态:
已结题
起止时间:
2018-01-01 至 2019-12-31

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中文摘要
翻译
太阳能为终端用户提供了一种非常清洁和实用的发电选择。特别是,屋顶光伏板作为满足住宅能源需求的一种手段已被广泛接受。光伏板将太阳能转化为电能。然后,使用电力电子转换器将光伏板产生的电力转换为各种负载的兼容电力。这些电力电子转换器的有效架构是太阳能直流优化器。太阳能直流优化器的主要任务是跟踪光伏板的最大功率点。这种体系结构提供了许多优于其他配置的优点,例如低成本和高效率。硅基功率半导体(即mosfet)通常用于实现现有的太阳能直流优化器。尽管硅开关具有可靠性和低成本等优点,但它们不能提供高效的超快速开关性能和低导通损耗。下一代功率半导体基于氮化镓(GaN)技术,能够提供卓越的开关和传导性能。目前,它们的使用受到限制,因为与Si开关相比,它们的成本更高,可靠性更低。在本研究项目中,将设计和开发一种新的基于氮化镓的太阳能直流优化器,该优化器能够在效率和功率密度方面提供更高的性能。
英文摘要
Solar energy offers a very clean and practical option for power generation to end-users. In particular, rooftop Photo-Voltaic (PV) panels have become widely accepted as a means to fulfill residential energy demand. PV panels convert solar energy to electricity. Then, power electronic converters are used to convert the electricity produced by PV panels to compatible power for various loads. An efficient architecture for these power electronic converters is a solar DC optimizer. The main task of solar DC optimizers is to track the maximum power point of PV panels. This architecture offers many advantages over other configurations such as low-cost and high efficiency. Silicon (Si)-based power semiconductors (i.e., MOSFETs) are commonly used in order to implement existing solar DC optimizers. Even though Si switches offer many advantages such as reliability and low cost, they cannot provide efficient ultra-fast switching performance and low conduction losses. Next-generation power semiconductors are based on Gallium Nitride (GaN) technology, which is able to offer superior switching and conduction performance. Currently, their usage is limited due to their higher cost and lower reliability compared to Si switches. In this research project, a new GaN-based solar DC optimizer will be designed and developed, which is able to offer higher performance in terms of efficiency and power density.
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