A new solar DC optimizer based on advanced GaN devices

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Solar energy offers a very clean and practical option for power generation to end-users. In particular, rooftop Photo-Voltaic (PV) panels have become widely accepted as a means to fulfill residential energy demand. PV panels convert solar energy to electricity. Then, power electronic converters are used to convert the electricity produced by PV panels to compatible power for various loads. An efficient architecture for these power electronic converters is a solar DC optimizer. The main task of solar DC optimizers is to track the maximum power point of PV panels. This architecture offers many advantages over other configurations such as low-cost and high efficiency. Silicon (Si)-based power semiconductors (i.e., MOSFETs) are commonly used in order to implement existing solar DC optimizers. Even though Si switches offer many advantages such as reliability and low cost, they cannot provide efficient ultra-fast switching performance and low conduction losses. Next-generation power semiconductors are based on Gallium Nitride (GaN) technology, which is able to offer superior switching and conduction performance. Currently, their usage is limited due to their higher cost and lower reliability compared to Si switches. In this research project, a new GaN-based solar DC optimizer will be designed and developed, which is able to offer higher performance in terms of efficiency and power density.