Analyse fine en champ proche et optimisation de l'effet piézoélectrique de films minces de nitrure d'aluminium synthétisés par pulvérisation.

分析粉末合成氮铝薄膜的压电效应的精细过程和优化。

• 批准号: 542456-2019
• 负责人: Soltani, Ali
• 金额: $ 1.82万
• 依托单位: Université de Sherbrooke
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=680265
• 关键词: Analyse; fine; en; champ; proche

Aluminum nitride (AlN) is a material with application in a number of technological areas owing to its optical, dielectric and acoustic properties. Particularly, as a piezoelectric material with good dielectric properties, such as low losses, good high frequency characteristics, high velocity coupling coefficient, AlN film has received a great deal of attention for high temperature operating. Many research groups have done a tremendous amount of research on AlN film growth in recent years. They mainly focused on the development of sophisticated film-synthesis techniques, controlling the preferred orientation by change of deposition parameters, and substantial improvement in the understanding of the related materials science.Teledyne Dalsa have shown in some works that in condition to tune the deposition conditions, it is possible to improve significantly the crystalline quality of the films even if one use magnetron sputtering system at low temperature. Nevertheless, it has been observed that the good crystalline quality does not lead systematically to high piezoelectric performances. In the frame of this work, we have tried to address this question thanks to a large panel of local probe technic (AFM, C-AFM, K-PFM) and piezoelectric investigations.

氮化铝（AlN）由于其光学、介电和声学特性而在许多技术领域中具有应用。特别是AlN薄膜作为一种介电性能良好的压电材料，具有低损耗、高频特性好、速度耦合系数高等优点，在高温下工作受到了广泛的关注。近年来，许多研究小组对氮化铝薄膜的生长进行了大量的研究。他们主要集中在开发复杂的薄膜合成技术，通过改变沉积参数来控制择优取向，以及对相关材料科学的理解的实质性改进。Teledyne Dalsa在一些工作中表明，在调节沉积条件的条件下，即使在低温下使用磁控溅射系统，也可以显著提高膜的结晶质量。然而，已经观察到，良好的结晶质量不会系统地导致高压电性能。在这项工作的框架内，我们试图解决这个问题，由于一个大面板的本地探针技术（AFM，C-AFM，K-PFM）和压电调查。