Growth and Properties of Novel Epitaxial Semiconductor Films

新型外延半导体薄膜的生长和性能

基本信息

  • 批准号:
    RGPIN-2019-06839
  • 负责人:
  • 金额:
    $ 2.99万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Discovery Grants Program - Individual
  • 财政年份:
    2021
  • 资助国家:
    加拿大
  • 起止时间:
    2021-01-01 至 2022-12-31
  • 项目状态:
    已结题

项目摘要

Semiconductor materials are an essential part of many modern technologies. Silicon is used to make integrated circuits for information processing. Compound semiconductors are used in semiconductor lasers and for high speed optical and wireless communications. Gallium nitride, a relatively new semiconductor material, has enabled a new lighting technology based on light emitting diodes (LED) that uses only a fraction of the power of the incandescent lights that it replaces. LED lights have achieved mass market success in a remarkably short period of time. Even more revolutionary, solar cells based on silicon photovoltaic devices have achieved cost parity with fossil fuels for power generation in a growing number of regions. There is no sign that this impressive growth in the impact of semiconductor technology is slowing. For example in the last 10 or so years researchers have discovered a variety of new quantum phenomena in which semiconductor materials are central. A worldwide race is underway to build a new type of computer known as a quantum computer and to apply quantum technology to communications and sensing. These new quantum technologies are likely to be implemented using semiconductor materials. In parallel with the growth in semiconductor technology described above, there has been a steady expansion in the number of different semiconductors used in commercial products, selected because of their properties for particular applications. In most devices the semiconductor material needs to be in the form of a thin crystalline layer, or film, on a single crystal substrate wafer. The goal of this research program is to explore a promising class of semiconductor materials that up to now has been neglected, whose potential for useful applications is not known. We will grow these materials in the form of crystalline films by molecular beam epitaxy and measure their optical and electrical properties. The semiconductors of interest belong to the II3-V2 family of which Mg3N2 and Zn3N2 are examples. Unlike most conventional compound semiconductors this family of semiconductors includes materials made up of inexpensive and non-toxic elements that are ecologically friendly. Semiconductors in the II3-V2 class have potential applications in flexible electronics, energy harvesting from room lights, silicon solar panels with enhanced efficiency and in future quantum devices. This research program will train students in the area of semiconductor technology. People who understand semiconductor materials and devices are needed to help Canada succeed in the world-wide effort to develop new commercial optical and electronic technologies. Our lab at the University of Victoria has an international profile as a leading group in the area of compound semiconductor growth using molecular beam epitaxy.
半导体材料是许多现代技术的重要组成部分。硅被用来制造信息处理的集成电路。化合物半导体用于半导体激光器以及高速光和无线通信。氮化镓是一种相对较新的半导体材料,它使一种基于发光二极管(LED)的新照明技术成为可能,这种技术只使用它所取代的白炽灯的一小部分功率。LED灯在很短的时间内取得了大众市场的成功。更具革命性的是,在越来越多的地区,基于硅光伏器件的太阳能电池已经实现了与化石燃料发电成本相当的目标。没有迹象表明半导体技术的影响力正在放缓。例如,在过去10年左右的时间里,研究人员发现了各种新的量子现象,其中半导体材料是核心。一场全球性的竞赛正在进行,以建造一种被称为量子计算机的新型计算机,并将量子技术应用于通信和传感。这些新的量子技术可能会使用半导体材料来实现。 与上述半导体技术的发展同时,用于商业产品的不同半导体的数量也在稳步增长,这些半导体因其特定应用的特性而被选择。在大多数器件中,半导体材料需要在单晶衬底晶片上呈薄晶体层或膜的形式。这项研究计划的目标是探索一类有前途的半导体材料,到目前为止一直被忽视,其有用的应用潜力尚不清楚。我们将以分子束磊晶的方式,以结晶薄膜的形式来成长这些材料,并量测它们的光学与电学性质。感兴趣的半导体属于II 3-V2族,其中Mg3 N2和Zn 3 N2是实例。与大多数传统的化合物半导体不同,这个半导体家族包括由廉价和无毒的生态友好元素组成的材料。II 3-V2类半导体在柔性电子产品、室内照明能量收集、效率提高的硅太阳能电池板和未来的量子器件中具有潜在的应用。该研究计划将培养学生在半导体技术领域。需要了解半导体材料和器件的人来帮助加拿大在全球范围内成功地开发新的商业光学和电子技术。 我们位于维多利亚大学的实验室在使用分子束外延生长化合物半导体领域具有国际知名度。

项目成果

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Tiedje, Thomas其他文献

Epitaxial Nd-doped α-(Al1-xGax)2O3 films on sapphire for solid-state waveguide lasers
  • DOI:
    10.1364/ol.35.003793
  • 发表时间:
    2010-11-15
  • 期刊:
  • 影响因子:
    3.6
  • 作者:
    Kumaran, Raveen;Tiedje, Thomas;Li, Wei
  • 通讯作者:
    Li, Wei
Limiting efficiency of indoor silicon photovoltaic devices
  • DOI:
    10.1364/oe.26.028238
  • 发表时间:
    2018-10-29
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    Bahrami-Yekta, Vahid;Tiedje, Thomas
  • 通讯作者:
    Tiedje, Thomas
MBE growth optimization for GaAs1-xBix and dependence of photoluminescence on growth temperature
  • DOI:
    10.1088/0268-1242/30/9/094007
  • 发表时间:
    2015-09-01
  • 期刊:
  • 影响因子:
    1.9
  • 作者:
    Bahrami-Yekta, Vahid;Tiedje, Thomas;Masnadi-Shirazi, Mostafa
  • 通讯作者:
    Masnadi-Shirazi, Mostafa

Tiedje, Thomas的其他文献

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{{ truncateString('Tiedje, Thomas', 18)}}的其他基金

Growth and Properties of Novel Epitaxial Semiconductor Films
新型外延半导体薄膜的生长和性能
  • 批准号:
    RGPIN-2019-06839
  • 财政年份:
    2022
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Novel Epitaxial Semiconductor Films
新型外延半导体薄膜的生长和性能
  • 批准号:
    RGPIN-2019-06839
  • 财政年份:
    2020
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Novel Epitaxial Semiconductor Films
新型外延半导体薄膜的生长和性能
  • 批准号:
    RGPIN-2019-06839
  • 财政年份:
    2019
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Epitaxial Semiconductor Films
外延半导体薄膜的生长和性能
  • 批准号:
    36322-2012
  • 财政年份:
    2018
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Contactless detection and analysis of electronic defects in CdZnTe
CdZnTe 中电子缺陷的非接触式检测与分析
  • 批准号:
    509497-2017
  • 财政年份:
    2017
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Engage Grants Program
UVic Engineering Industry Night
维多利亚大学工程产业之夜
  • 批准号:
    520509-2017
  • 财政年份:
    2017
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Connect Grants Level 2
University of Victoria engineering industry appreciation night
维多利亚大学工程产业鉴赏之夜
  • 批准号:
    506706-2016
  • 财政年份:
    2016
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Connect Grants Level 2
Growth and Properties of Epitaxial Semiconductor Films
外延半导体薄膜的生长和性能
  • 批准号:
    36322-2012
  • 财政年份:
    2015
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Epitaxial Semiconductor Films
外延半导体薄膜的生长和性能
  • 批准号:
    36322-2012
  • 财政年份:
    2014
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Epitaxial Semiconductor Films
外延半导体薄膜的生长和性能
  • 批准号:
    36322-2012
  • 财政年份:
    2013
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual

相似海外基金

Growth and Properties of Novel Epitaxial Semiconductor Films
新型外延半导体薄膜的生长和性能
  • 批准号:
    RGPIN-2019-06839
  • 财政年份:
    2022
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Novel Epitaxial Semiconductor Films
新型外延半导体薄膜的生长和性能
  • 批准号:
    RGPIN-2019-06839
  • 财政年份:
    2020
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth and Properties of Novel Epitaxial Semiconductor Films
新型外延半导体薄膜的生长和性能
  • 批准号:
    RGPIN-2019-06839
  • 财政年份:
    2019
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Discovery Grants Program - Individual
Growth of high-quality thin films of the novel ZnAs-based magnetic semiconductors and improving the properties
新型ZnAs基磁性半导体的高质量薄膜的生长和性能的改善
  • 批准号:
    17H02921
  • 财政年份:
    2017
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Correlation of growth, structure, optical and electronic properties of novel Nb3O7(OH) and Nb2O5 nanostructures
新型 Nb3O7(OH) 和 Nb2O5 纳米结构的生长、结构、光学和电子特性的相关性
  • 批准号:
    289657667
  • 财政年份:
    2017
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Research Grants
Novel Infrared Optical Materials Based on III-Nitride Semiconductors: Growth, Structure and Properties
基于III族氮化物半导体的新型红外光学材料:生长、结构和性能
  • 批准号:
    1610893
  • 财政年份:
    2016
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Continuing Grant
Growth and Physical Properties Measurements of Novel Condensed Matter Materials
新型凝聚态材料的生长和物理性能测量
  • 批准号:
    0907036
  • 财政年份:
    2009
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Standard Grant
Crystal growth and properties of novel multiferroic oxide compounds
新型多铁氧化物化合物的晶体生长和性能
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  • 财政年份:
    2006
  • 资助金额:
    $ 2.99万
  • 项目类别:
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Growth and Physical Properties Measurements of Novel Condensed Matter Materials
新型凝聚态材料的生长和物理性能测量
  • 批准号:
    0504769
  • 财政年份:
    2005
  • 资助金额:
    $ 2.99万
  • 项目类别:
    Continuing Grant
Cluster growth and deposition processes and novel properties by hybrid model
混合模型的团簇生长和沉积过程以及新特性
  • 批准号:
    16310080
  • 财政年份:
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  • 资助金额:
    $ 2.99万
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