Semiconductor nanostructures: surfaces, strain and devices
Semiconductor nanostructures: surfaces, strain and devices
批准号:
RGPIN-2020-05721
负责人:
Lewis, Ryan
金额:
$2.4万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2021
资助国家:
加拿大
项目状态:
已结题
起止时间:
2021-01-01 至 2022-12-31
中文摘要
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英文摘要
The proposed research program will develop new approaches to semiconductor nanofabrication, where surface, strain and geometry effects are employed to control the synthesis and properties of semiconductor nanostructures and devices. Our long-term goal is to realize next-generation nanotechnologies for quantum information/communications, optical data communication and biosensing. Surface effects play a dominant role in the self-assembly of nanostructures such as nanowires and quantum dots. The proposed research will explore surface-property-modifying methods to direct nanostructure self-assembly. One objective will be to realize InAs quantum dots on surfaces where quantum dot self-assembly does not normally occur, such as GaAs{111}-where the high symmetry is expected to yield quantum dots that are ideal for entangled-photon emission. This work could enable wafer-scale semiconductor entangled-photon generators that can be integrated with on-chip optical technologies, furthering Canada's excellence in quantum research and technology development. The proposed research will also explore engineering strain gradients-which cannot be realized in conventional planar heterostructures-in nanowire heterostructures and employ them to control nanostructure geometry and optoelectronic properties. This will enable more efficient optoelectronic nano-devices and overcome fabrication challenges currently inhibiting the deployment of nanowires in nanotechnology. One focus will be to develop U-shaped nanowires for ultra-sensitive and ultra-fast biosensors with applications in continuous health monitoring and point-of-care diagnostics, as well as nanowire optical interconnects. Another research direction will explore new methods for integrating III-V materials and devices on the Si platform. Two approaches will be pursued: direct growth of III-V materials on Si/Ge using surfactants, and integrating III-V nanowire devices with Si photonic structures. This work could lead to the next-generation of interconnects for optical data communication, reducing the energy consumption of the internet and increasing data transfer rates to meet future demands. Along these lines, we anticipate future collaborations with the Canadian optical data communications industry. This research program will give Canada a boost in developing disruptive technologies with wide-ranging market potential. In the long term, this work will help enable technologies that will improve the lives of Canadians (e.g., by providing affordable high-speed internet and point-of-care medical diagnostics to remote communities, by improving continuous health monitoring devices for people with medical conditions, and by improving the energy efficiency and speed of the internet). Extensive training opportunities will prepare young researchers for careers as innovators and leaders in the Canadian optoelectronics/semiconductor/quantum technology sectors.
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Semiconductor nanostructures: surfaces, strain and devices
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批准号:RGPIN-2020-05721
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2022
-
负责人:Lewis, Ryan
-
依托单位:
Semiconductor nanostructures: surfaces, strain and devices
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批准号:DGECR-2020-00433
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项目类别:Discovery Launch Supplement
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资助金额:$0.91万
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财政年份:2020
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负责人:Lewis, Ryan
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依托单位:
Semiconductor nanostructures: surfaces, strain and devices
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批准号:RGPIN-2020-05721
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
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财政年份:2020
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负责人:Lewis, Ryan
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依托单位:
Investigation of recombination mechanisms in GaAs (1-x) Bi (x) light emitting devices
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批准号:404837-2010
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项目类别:Canadian Graduate Scholarships Foreign Study Supplements
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资助金额:$0.44万
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财政年份:2011
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负责人:Lewis, Ryan
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依托单位:
Growth and Characterization of GaNAsBi films for broad-band light emitting devices
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批准号:363010-2008
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项目类别:Alexander Graham Bell Canada Graduate Scholarships - Doctoral
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资助金额:$2.55万
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财政年份:2010
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负责人:Lewis, Ryan
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依托单位:
Growth and Characterization of GaNAsBi films for broad-band light emitting devices
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批准号:363010-2008
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项目类别:Alexander Graham Bell Canada Graduate Scholarships - Doctoral
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资助金额:$2.55万
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财政年份:2009
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负责人:Lewis, Ryan
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依托单位:
Growth and Characterization of GaNAsBi films for broad-band light emitting devices
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批准号:363010-2008
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项目类别:Alexander Graham Bell Canada Graduate Scholarships - Doctoral
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资助金额:$2.55万
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财政年份:2008
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负责人:Lewis, Ryan
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依托单位:
Novel materials for wide bandwidth light sources for optical coherence tomography
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批准号:347296-2007
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项目类别:Alexander Graham Bell Canada Graduate Scholarships - Master's
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资助金额:$1.27万
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财政年份:2007
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负责人:Lewis, Ryan
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依托单位:
海外基金