Semiconductor nanostructures: surfaces, strain and devices
半导体纳米结构:表面、应变和器件
基本信息
- 批准号:RGPIN-2020-05721
- 负责人:
- 金额:$ 2.4万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2021
- 资助国家:加拿大
- 起止时间:2021-01-01 至 2022-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The proposed research program will develop new approaches to semiconductor nanofabrication, where surface, strain and geometry effects are employed to control the synthesis and properties of semiconductor nanostructures and devices. Our long-term goal is to realize next-generation nanotechnologies for quantum information/communications, optical data communication and biosensing. Surface effects play a dominant role in the self-assembly of nanostructures such as nanowires and quantum dots. The proposed research will explore surface-property-modifying methods to direct nanostructure self-assembly. One objective will be to realize InAs quantum dots on surfaces where quantum dot self-assembly does not normally occur, such as GaAs{111}-where the high symmetry is expected to yield quantum dots that are ideal for entangled-photon emission. This work could enable wafer-scale semiconductor entangled-photon generators that can be integrated with on-chip optical technologies, furthering Canada's excellence in quantum research and technology development. The proposed research will also explore engineering strain gradients-which cannot be realized in conventional planar heterostructures-in nanowire heterostructures and employ them to control nanostructure geometry and optoelectronic properties. This will enable more efficient optoelectronic nano-devices and overcome fabrication challenges currently inhibiting the deployment of nanowires in nanotechnology. One focus will be to develop U-shaped nanowires for ultra-sensitive and ultra-fast biosensors with applications in continuous health monitoring and point-of-care diagnostics, as well as nanowire optical interconnects. Another research direction will explore new methods for integrating III-V materials and devices on the Si platform. Two approaches will be pursued: direct growth of III-V materials on Si/Ge using surfactants, and integrating III-V nanowire devices with Si photonic structures. This work could lead to the next-generation of interconnects for optical data communication, reducing the energy consumption of the internet and increasing data transfer rates to meet future demands. Along these lines, we anticipate future collaborations with the Canadian optical data communications industry. This research program will give Canada a boost in developing disruptive technologies with wide-ranging market potential. In the long term, this work will help enable technologies that will improve the lives of Canadians (e.g., by providing affordable high-speed internet and point-of-care medical diagnostics to remote communities, by improving continuous health monitoring devices for people with medical conditions, and by improving the energy efficiency and speed of the internet). Extensive training opportunities will prepare young researchers for careers as innovators and leaders in the Canadian optoelectronics/semiconductor/quantum technology sectors.
拟议的研究计划将开发新的方法,半导体纳米纤维,其中表面,应变和几何效应被用来控制半导体纳米结构和器件的合成和性能。我们的长期目标是实现量子信息/通信,光学数据通信和生物传感的下一代纳米技术。表面效应在纳米线和量子点等纳米结构的自组装过程中起着主导作用。拟议的研究将探索表面改性方法,以指导纳米结构自组装。一个目标将是在量子点自组装通常不会发生的表面上实现InAs量子点,例如GaAs{111}-其中预计高对称性将产生理想的纠缠光子发射的量子点。这项工作可以使晶圆级半导体纠缠光子发生器能够与片上光学技术集成,进一步促进加拿大在量子研究和技术开发方面的卓越成就。拟议中的研究还将探讨工程应变梯度-这不能实现在传统的平面异质结构-在纳米线异质结构,并利用它们来控制纳米结构的几何形状和光电性能。这将使更有效的光电纳米器件,并克服目前抑制纳米线在纳米技术中的部署的制造挑战。其中一个重点将是开发用于超灵敏和超快速生物传感器的U形纳米线,应用于连续健康监测和护理点诊断,以及纳米线光学互连。另一个研究方向将探索在Si平台上集成III-V族材料和器件的新方法。将追求两种方法:使用表面活性剂在Si/Ge上直接生长III-V材料,以及将III-V纳米线器件与Si光子结构集成。这项工作可能会导致下一代光数据通信互连,降低互联网的能耗,提高数据传输速率,以满足未来的需求。沿着这些路线,我们预计未来的合作与加拿大光数据通信行业。该研究计划将推动加拿大开发具有广泛市场潜力的颠覆性技术。从长远来看,这项工作将有助于实现改善加拿大人生活的技术(例如,通过向偏远社区提供负担得起的高速互联网和护理点医疗诊断,通过改善为有医疗条件的人提供的持续健康监测设备,以及通过提高互联网的能源效率和速度)。广泛的培训机会将为年轻的研究人员在加拿大光电子/半导体/量子技术领域的创新者和领导者做好准备。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Lewis, Ryan其他文献
Disaster on the horizon: The price effect of sea level rise
- DOI:
10.1016/j.jfineco.2019.03.013 - 发表时间:
2019-11-01 - 期刊:
- 影响因子:8.9
- 作者:
Bernstein, Asaf;Gustafson, Matthew T.;Lewis, Ryan - 通讯作者:
Lewis, Ryan
Thin Flexible Thermal Ground Planes: Fabrication and Scaling Characterization
- DOI:
10.1109/jmems.2015.2466540 - 发表时间:
2015-12-01 - 期刊:
- 影响因子:2.7
- 作者:
Lewis, Ryan;Xu, Shanshan;Lee, Yung-Cheng - 通讯作者:
Lee, Yung-Cheng
Microfabricated ultra-thin all-polymer thermal ground planes
- DOI:
10.1007/s11434-015-0760-9 - 发表时间:
2015-04-01 - 期刊:
- 影响因子:18.9
- 作者:
Lewis, Ryan;Liew, Li-Anne;Yang, Ronggui - 通讯作者:
Yang, Ronggui
Beyond scale-free networks: integrating multilayer social networks with molecular clusters in the local spread of COVID-19.
- DOI:
10.1038/s41598-023-49109-x - 发表时间:
2023-12-09 - 期刊:
- 影响因子:4.6
- 作者:
Fujimoto, Kayo;Kuo, Jacky;Stott, Guppy;Lewis, Ryan;Chan, Hei Kit;Lyu, Leke;Veytsel, Gabriella;Carr, Michelle;Broussard, Tristan;Short, Kirstin;Brown, Pamela;Sealy, Roger;Brown, Armand;Bahl, Justin - 通讯作者:
Bahl, Justin
Beyond the PSA test: How to better stratify a patient's risk of prostate cancer
- DOI:
10.1097/01.jaa.0000521148.78442.d5 - 发表时间:
2017-08-01 - 期刊:
- 影响因子:1.1
- 作者:
Lewis, Ryan;Hornberger, Brad - 通讯作者:
Hornberger, Brad
Lewis, Ryan的其他文献
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{{ truncateString('Lewis, Ryan', 18)}}的其他基金
Semiconductor nanostructures: surfaces, strain and devices
半导体纳米结构:表面、应变和器件
- 批准号:
RGPIN-2020-05721 - 财政年份:2022
- 资助金额:
$ 2.4万 - 项目类别:
Discovery Grants Program - Individual
Semiconductor nanostructures: surfaces, strain and devices
半导体纳米结构:表面、应变和器件
- 批准号:
DGECR-2020-00433 - 财政年份:2020
- 资助金额:
$ 2.4万 - 项目类别:
Discovery Launch Supplement
Semiconductor nanostructures: surfaces, strain and devices
半导体纳米结构:表面、应变和器件
- 批准号:
RGPIN-2020-05721 - 财政年份:2020
- 资助金额:
$ 2.4万 - 项目类别:
Discovery Grants Program - Individual
Investigation of recombination mechanisms in GaAs (1-x) Bi (x) light emitting devices
GaAs(1-x)Bi(x)发光器件复合机制的研究
- 批准号:
404837-2010 - 财政年份:2011
- 资助金额:
$ 2.4万 - 项目类别:
Canadian Graduate Scholarships Foreign Study Supplements
Growth and Characterization of GaNAsBi films for broad-band light emitting devices
用于宽带发光器件的 GaNAsBi 薄膜的生长和表征
- 批准号:
363010-2008 - 财政年份:2010
- 资助金额:
$ 2.4万 - 项目类别:
Alexander Graham Bell Canada Graduate Scholarships - Doctoral
Growth and Characterization of GaNAsBi films for broad-band light emitting devices
用于宽带发光器件的 GaNAsBi 薄膜的生长和表征
- 批准号:
363010-2008 - 财政年份:2009
- 资助金额:
$ 2.4万 - 项目类别:
Alexander Graham Bell Canada Graduate Scholarships - Doctoral
Growth and Characterization of GaNAsBi films for broad-band light emitting devices
用于宽带发光器件的 GaNAsBi 薄膜的生长和表征
- 批准号:
363010-2008 - 财政年份:2008
- 资助金额:
$ 2.4万 - 项目类别:
Alexander Graham Bell Canada Graduate Scholarships - Doctoral
Novel materials for wide bandwidth light sources for optical coherence tomography
用于光学相干断层扫描的宽带光源的新型材料
- 批准号:
347296-2007 - 财政年份:2007
- 资助金额:
$ 2.4万 - 项目类别:
Alexander Graham Bell Canada Graduate Scholarships - Master's
相似海外基金
Semiconductor nanostructures: surfaces, strain and devices
半导体纳米结构:表面、应变和器件
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$ 2.4万 - 项目类别:
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