以霍尔天平结构为基础的多组态磁信息存储材料是一种新型的自旋电子学材料，这种材料的反常霍尔效应调控物理机理包含了非常丰富的物理内涵，同时在未来高密度（3D存储模式）、低功耗和高运算速度的磁信息存储器的开发设计中具有非常重要的应用潜力。本项目以具有垂直磁各向异性的霍尔天平薄膜材料为主要研究对象，重点研究该体系中反常霍尔效应调控的物理机理，突破霍尔天平薄膜材料反常霍尔偏转角提高的技术瓶颈，制备具有高质量、性能可控的多组态反常霍尔效应薄膜材料，探索基于霍尔天平结构的新型多组态磁存储原理型器件中材料、物理及相关技术问题。

A new magnetic storage materials based on Hall balance exhibit abundant physical phenomena and great potential applications in future high storage density (3D storage), low power and fast logic operation spintronic devices. This project is based on the perpendicular magnetic films with Hall balance structures. The research mainly includes the physical mechanism of Anomalous Hall effect and optimization of film fabrication and so on. And the focus is the preparation of high quality Hall balance films and improvement of the Hall angle. The key challenges is to solve some critical physical and materials issues of magnetic film deposition, transport properties, structure characterization, and to solve some problems for the future multi-state magnetic storage device based on Hall balance, such as physical mechanism, materials design, optimization, and device principles.