GaN宽禁带半导体材料是节能产业、尖端军事和空间用电子器件的核心，基于其对国民经济和国防建设的重要意义，GaN晶体材料的研究和应用成为了目前全球半导体研究的前沿和热点。但异质外延生长的GaN晶体具有较高的位错密度和较大应力，对光电器件的性能影响很大，成为制约其应用的主要瓶颈。本项目拟以不同衬底上生长得到的不同应力性质的GaN晶体为研究对象，对其应力-能带结构-缺陷之间的关系进行基础科学研究。具体内容包括：研究不同应力状态下GaN晶体缺陷的形成机制及变化规律;确定不同应力对能带结构的影响规律;建立基于不同衬底上生长GaN晶体的应力-缺陷-能带结构的关系模型。本项目将GaN晶体宏观应力和微观电学性质联系起来，丰富了GaN晶体生长及器件设计制备的理论依据，对掌握晶体生长稳定性规律，改善晶体质量，提高光电器件的性能具有重要理论意义和应用价值。

GaN wide bandgap semiconductor material is the core of energy-saving industry, cutting-edge military and space electronic devices. Based on its importance to national economy and national defense construction, GaN crystal material research and application has become the frontier and hotspot of global semiconductor research. However, heteroepitaxial GaN crystals have high dislocation density and large stress, which have great influence on the performance of optoelectronic devices and become the main bottleneck of their application. The GaN crystals with different stress properties obtained on different substrates are main research object. The relationship between stress band structure and defects of GaN crystals grown on different substrate will be investigated. The specific contents are as follows: The formation mechanism and variation of GaN crystal defects under different stress states will be studied. The influence of different stresses on the band structure will be determined. The relational model of stress-defect-band structure based on GaN crystal grown on different substrates will be established. This project will link the macro-stress and micro-electrical properties of GaN crystal, which enriches the theoretical basis of GaN crystal growth and device design. It has great theoretical and practical value to master the law of crystal growth stability, improve the crystal quality and improve the performance of optoelectronic devices.