传统器件已不满足更快更小的要求，因此纳米线器件成为研究的热点。量子点作为p-i-n型纳米线器件的理想i层材料，将它与纳米线集成激起了人们极大的兴趣。本项目采用可产业化的溅射沉积技术实现Ge/Si量子点和Si纳米线的集成，研究Si纳米线Ge/Si量子点复合结构溅射生长的物理机制及其光电性能。从制备有序Si纳米线新方法的提出入手，探索不同工艺参数对纳米线结构的影响；控制溅射原子入射Si纳米线的角度，寻找合适的沉积参数，实现纳米线轴向和共轴量子点复合结构，研究纳米线上量子点的演变规律，探讨纳米线和量子点中的应变状态，揭示量子点生长模式与纳米线尺寸的关系。基于纳米线轴向量子点，设计并试制一种新型的纳米线量子点复合结构。分析带隙调制、光学共振耦合、共振隧穿及解耦特性等因素对纳米线量子点复合结构光电性能的作用，获得性能良好的纳米线量子点复合材料，为实现Si材料光电子集成和新型纳米光电子器件研制奠定基础。

With technical progress, traditional devices can't satisfy the requirement for faster and smaller devices. Therefore, the research of nanowire devices is one of hot topic in semiconductor field. Because Quantum dots (QDs) are desirable materials as intrinsic layer in p-i-n junction nanowire devices, the integration of QDs and nanowires (NWs) has attracted huge interest. In this project, Ge/Si QDs are prepared on the surface of NWs or on the top of NWs by ion beam sputtering deposition which is one technique easy to implement industrial production. The growth mechanism and photoelectric properties of these composite structures, Ge/Si QDs on/in Si NWs, will be studied systematically. Based on nanosphere template and metal assisted chemical etching, two original methods are proposed for ordered Si NWs fabrication. And the effect of technological parameter of these methods on nanowire structure will be investigated. After change the incidence angle of sputtered atoms injected into Si NWs, the Ge atoms could be controlled to absorb on the surface of Si NWs or on the top of Si NWs, then the Ge/Si axial QDs in Si NWs and Ge/Si coaxial QDs on Si NWs can be formed under the appropriate conditions. The evolution of Ge/Si QDs on/in Si NWs will be discussed under the different growth conditions. The strain in Ge/Si QDs and Si NWs will also be studied. The relationship between Ge/Si QDs growth mode on/in Si NWs and Si NWs size also need be confirmed. According to the structure of Ge/Si axial QDs in Si NWs, a novel composite structure with Ge/Si QDs integrated Si NWs is designed, where the coxial QDs surround the axial QDs. Furthermore, the influence of band gap modulation, optical resonance coupling, resonant tunneling, and decoupling characteristic on the photoelectric properties of these composite structures should be analyzed. A favorable QDs/NWs composite structure will be obtained after this project accomplished. These researches will establish a good foundation to realize optoelectronic integrate using silicon-based materials and to fabricate new nano-photoelectric devices.