二维材料研究和相应的制备技术是目前材料科学的前沿领域。目前适合于晶圆级二维材料制备方法主要是化学气相沉积法。本申请旨在探索用脉冲激光分子束外延技术生长与研究化学气相沉积不适合的某些二维材料和相关异质结。本研究是基于申请者近年在国际上首次报道用常规的激光沉积法成功合成超薄黑磷和二维硒化铟(InSe)工作上，将利用我们新购置的新颖激光分子束外延生长加上原位监测表征系统，首次系统深入地研究生长模式及层状结构的形成过程，表面和异质结界面以及制备工艺对样品各种性质的影响。在实验中发现新现象和建立理论模型，将研究合成的二维材料和原位制备的异质结的物理特性，并演示其原理型电子与光电子器件。本研究将既扩大激光沉积法在材料合成的传统应用，又有望将其在二维材料生长方面发展成为化学气相沉积法的重要补充，开拓出研究晶圆级二维材料的快速生长，原位表征分析和连续精确可控二维异质结制备的新手段、新平台和新方向。

Research on two-dimensional (2D) materials and relevant synthesis techniques is an important cutting-edge field in materials science. Up to now, chemical vapor deposition (CVD) is a main method for depositing wafer-scale 2D materials. This project aims at growing and investigating some 2D materials and relevant heterostructures where CVD has proven to be unsuccessful. The proposed study is on a basis of our recent works on successfully growing black phosphorus ultrathin films and 2D InSe by using conventional pulsed laser deposition (PLD).firstly reported in international journals. By using a newly purchased novel system of laser molecular beam epitaxy coupled with in situ monitoring and characterization tools, we will systematically and deeply study on the growth mode and the formation of layer structure, surface and heterostructure interface, as well as the effects of fabrication process on the sample’s various properties. We will observe and investigate new phenomena via theoretical modelling. Physical properties of the synthesized 2D materials and in situ grown heterostructures will be characterized. Prototype of electronic and optoelectronic devices will be demonstrated. Consequently, this project will not only expand the scope of traditional application of PLD, but also offer an important alternative to CVD for 2D material growth. The proposed study will provide a new research method, platform and direction in developing fast growth and in situ characterization of wafer-scale 2D materials and precisely controllable fabrication of 2D heterostructures.