常用沉淀法去除重金属离子，但细小沉淀物不能被过滤干净。物理吸附法由于具有运行成本较低，处理量大，可脱附的优点，被认为在吸附重金属沉淀物时具有应用前景。但目前的物理吸附法有诸如吸附能力不够或成本高等缺点。为克服这些缺点，本项目设计一种新的吸附机制，利用废热和半导体材料的Seebeck效应在表面具有多孔的半导体材料的吸附端产生净电荷，用以吸附表面基团带电的重金属沉淀物（以重金属硫化物为例）；并探索该机制下表面多孔半导体材料的吸附、脱附的主要影响因素，温差、吸附面微观形貌和比表面积、重金属离子“电量/离子比值”对吸附、脱附能力的影响，吸附材料形貌和温差对重金属离子和吸附材料中金属离子发生氧化还原反应电子电位的影响，及半导体表面纳米孔洞形貌对其Seebeck系数的影响；总结新吸附机制下吸附规律和优化吸附材料参数。本项目的完成将为治理重金属废水提供更低成本和快速的治理机制。

Precipitation method is a common method to remove heavy metal from waste water. But it has a shortage that the tiny precipitated particles cannot be removed by filtering. The physisorption method is regarded as the most prospective method in removing the above-said tiny precipitated particles due to its merits such as cost effective, massive treating quantity, desorption ability. But there are still shortages in physisorption method that the adsorption ability is limited or cost. In order to address its shortages, this proposal presents a new adsorption-desorption mechanism that the tiny heavy metal precipitated particles possessing charged functional group can be adsorbed by net charges on the surface of bulk semiconductor produced by temperature difference owing to Seebeck effect. The influence factors, especially the temperature difference, the microstructures and specific of the absorbing surface of bulk semiconductor and the “ratio of charges to ionic mass”on the adsorption and desorption of heavy metal precipitated particles would be studied in this work. In addition, the influences of the microstructure of the surface of bulk semiconductor, as well as temperature difference on the redox potential of “heavy metal ion in solution/metal ion in the bulk semiconductor”and the Seebeck coefficient would be researched in this proposal. Finally, the adsorption rules and the dynamic kinetics about the new mechanism would be analysized and concluded.This work would provide a new route and new apparatus to remove the heavy metal from waste water with less cost and more rapid treating rate.