悬浮石墨烯纳米带电子器件中缺陷与电学性能之间关系的原位透射电镜研究

将石墨烯纳米带（GNR）的实际结构和它的性质如其电学特性直接关联是构筑GNR微纳器件所面临的一个重要的挑战。这其中包含两个技术难题，第一个难题是如何在原子尺度下对微纳器件的结构进行表征，同时可以获得它的电学响应；另一个难题是在制备纳米材料时（如GNR）如何可以避免缺陷的产生，这是由于缺陷对GNR的结构和电学特性都会产生严重的影响。因此本项目针对上述关键技术难题从以下三个方面展开研究：（1）利用原位球差校正透射电子显微镜技术对悬浮GNR进行电学特性表征的同时，可以实时获得原子尺度上的图像；（2）原位构筑悬浮GNR场效应晶体管的技术；（3）将缺陷与微纳器件电学特性相关联。本项目可为发展新型、强大的GNR应用提供全新思路，特别是在原子尺度上依赖于GNR结构的，如可用于快速DNA复制的晶体管。

A major challenge facing graphene nanoribbon (GNR) devices is an urgent need to be able to correlate the actual structure of the GNR with their properties for example their electrical response. This poses two problems. The first problem is to characterize the structure of a device at the atomic scale while simultaneously being able to observe its electrical response. The second problem is to avoid introducing defects during the fabrication of nanoscale structures like GNRs. Defects have a critical impact on both the structure and electrical performance of GNRs. In this work we aim to: (i) develop an in situ characterization technique using state of the art aberration corrected transmission electron microscopy so that electrically contacted suspended GNR can be observed with atomic scale resolution while simultaneously operating as an electrical device, (ii) fabricate in situ suspended field effect transistors (iii) correlate defects with electrical performance. Our work will open up new possibilities for developing new powerful GNR applications that crucially depend on controlling the GNR structure at the atomic scale, for example, transistors for rapid DNA transcription.