高效发光Si材料对实现全硅基光电子－微电子集成工程具有重要意义。本项目研究采用硅离子（Si+）自注入并结合可控热处理的方法，在SOI基片上的Si薄膜中生成新型的发光缺陷（或团簇），并探索在可见—红外波段近室温高效发光的新型Si材料制备科学和改性工艺。通过本项目的实施，在Si薄膜中诱导形成新型发光团簇，从而在间接带隙的半导体中实现高效率的光学跃迁；揭示Si+自注入Si薄膜中各类光学团簇的发光性质、微结构、发光机理及其在人工改性过程中的演变路径。通过引入应变、其它辅助性离子或直接集成光学微腔等方式，显著增强自离子注入Si薄膜中团簇的发光效率，并阐明团簇光学性能被有效增强的相关机理，最终实现近室温运行的高性能SOI发光材料。项目研究可为推动SOI材料发光技术的发展以及实现室温全Si基光电子集成奠定基础。

The silicon materials with high light emitting efficiency play an important role in meeting the task of full silicon based optoelectronic and microelectronic integration. In this proposal, the Si self-ion-implantation technique combined with controllable thermal annealing processes is selected to produce the light emitting defects (or clusters) in the Si film on the silicon-on-insulator (SOI) substrate. Then, the fabrication science and property modulation process of novel silicon materials should be investigated intensively to realize the light emitting in the range from visible to near-infrared wave band at high temperatures with high efficiency. With the implementation of this project, novel optical clusters can be formed in the Si films by Si+ self-implanted and the subsequent thermal processing. As a result, the high efficient optical transition can be constructed in those semiconductors with indirect bandgap. The luminescence characteristics, microstructure, and light emitting mechanism of all kinds of the clusters and the evolution path of that with the artificial property-modulated processes can be revealed as well. By taking advantages of these techniques, such as introducing the strain, other assistant ions, and fabricating optical mircocavity, the light emitting efficiency of the clusters in self-ion-implanted Si films can be improved remarkably, meanwhile the relative mechanisms on which the optical performance of these clusters is improved effectively will be clarified. Finally, the novel light emitting materials with high efficiency can also be expected automatically. In a word, the accomplishment of this project can promote the progress of the light emitting technology of SOI materials, and realize the fundamental task of full silicon based optoelectronic and microelectronic integration operating at room temperature.